2023
DOI: 10.1016/j.apsusc.2022.155115
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Silicon addition as a way to control properties of tribofilms and friction of DLC coatings

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Cited by 8 publications
(8 citation statements)
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“…16 The D-peak (1311 cm −1 ), G-peak (1515 cm −1 ), full width at half-maximum for the Gband (fwhm G ; 198 cm −1 ), I D /I G ratio (0.61), and hydrogen content (22.66%), were obtained to assess the sp 2 bonding structure. The G-peak center position obtained was lower than that reported in previous studies, either using the same DC-PECVD method (1540−1544 cm −1 ) or the same deposition chemical components (1549−1589 cm −1 ), 13,14,28,33 indicating a low internal stress in the DLC film in our study. In detail, the G-peak wavenumber indirectly reflects the degree of carbon disorder and structure order of the sp 2 sites of the DLC film.…”
Section: Resultscontrasting
confidence: 86%
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“…16 The D-peak (1311 cm −1 ), G-peak (1515 cm −1 ), full width at half-maximum for the Gband (fwhm G ; 198 cm −1 ), I D /I G ratio (0.61), and hydrogen content (22.66%), were obtained to assess the sp 2 bonding structure. The G-peak center position obtained was lower than that reported in previous studies, either using the same DC-PECVD method (1540−1544 cm −1 ) or the same deposition chemical components (1549−1589 cm −1 ), 13,14,28,33 indicating a low internal stress in the DLC film in our study. In detail, the G-peak wavenumber indirectly reflects the degree of carbon disorder and structure order of the sp 2 sites of the DLC film.…”
Section: Resultscontrasting
confidence: 86%
“…The obtained I D / I G (0.61) ratio indirectly represents the defectiveness degree of the coating. , Values less than 1 characterize increased carbon disorder (D band), boosting the sp 3 carbon hybridization. , Thus, the G-band located at a lower wavenumber might be attributed to the strengthening of the sp 3 bond in the material, as described previously . Based on obtained results, the presence of silicon used as an interlayer in our study probably replaces the carbon atoms (sp 2 bonded clusters), leading to the formation of sp 3 bonds since Si does not form π bonds, only σ. , In agreement with previous data, , the developed film also presented a high fwhm G , accounting for the observed high carbon disorder degree.…”
Section: Resultssupporting
confidence: 73%
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