Silanes. Vibrational Assignments and Frequency Correlations

JanzGeorge, J; MikawaYukio,

doi:10.1246/bcsj.34.1495

Cited by 37 publications

(10 citation statements)

References 84 publications

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“…2). The vibration which is excited is obviously v, at 2201 in SiH3C1 and 1581 cm-' in SiD3C1 (18). The reduction in stretching frequency in the ion is as expected for the removal of an electron from a bonding orbital, which in this case is mainly o(SiH3).…”

Section: Sih CLsupporting

confidence: 60%

“…'s are close together a doubly degenerate one will have a band about twice the area of a non-degenerate one but there is no real indication s f this in the present spectrum. It would have been hoped that the structure on the second component of the band would confirm the order predicted by the CNDO/2 ca!cu?afions, The spacing of the five peaks of the second component are 1470, 1420, 1400, and 1348 cm-l, which is most likely to correspond to a progression in the symmetric SiH, stretching vibration considerably reduced from 2206 cm-I in SiH,F (18). It would have been thought more likely for this mode to be excited by ionization from a, (mainly o SiH,) orbital, but if as the calculation suggests the higher energy component is the e(rzF), then there is a considerable bonding interaction between the fiuorine "Ione pair" orbital and the SiH, bonding orbital.…”

Section: H3 Sifmentioning

confidence: 73%

“…Altho~lgh all the previous bands have had no structure, the a, o(SiHC1,) band at 18.14 eV has three peaks separated by 2000 cm-I. This progression obviously involves v(a,) Si-H stretch, which has a value of 2236 cm-' in the neutral molecule (18). CNDO/2 calculations again indicate that this band is mainly Si(3s).…”

Section: Sihclmentioning

confidence: 90%

“…and i.r. spectra with the literature values for the pure species (18,19). The samples were stored at -196" until used.…”

Section: Introductionmentioning

confidence: 86%

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Photoelectron Spectra and Bonding in Some Halosilanes

Frost¹,

Herring²,

Katrib³

et al. 1971

Can. J. Chem.

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The photoelectron spectra of some halosilanes, SiB,X (X = F, C1, Br), SiH2X2 (X = F, CI), and SiHC1, have been studied, to obtain information on the bonding, especially (p -+ d)x back-bonding to silicon. The spectra were assigned on simple orbital overlap grounds, by comparison with the carbon analogues and by use of CWDO/2 calculations. Few discrepancies were found, but in these cases the first method was preferred. There is ample evidence from the individual ionization potentials and by comparison of the spectra with those of the analogous carbon compounds for interaction of the halogen pn: electrons with the silicon d orbitals. This is also indicated by some empirical calculations on the chlorosilanes, which also confirm the assignment of the spectra.It can also be shown that the ionization potentials are consistent with the silicon-halogen o bond strength decreasing through the series H3SiF > H3SiC1 > H,SiBr.Les spectres photo6lectroniques de quelques halosilanes SiHJ (X = F, Cl, Br), SiH2X, ( X = F, GI), et SiHC1, ont permis d'etudier le mode de liaison au silicium et plus particulibrement le renforcement de la liaison n(p + d). Les spectres sont attributs en considerant le simple recouvrement des orbitales par comparaison avec les analogues du carbone et en utilisant les calculs CND0/2. Bien que les resultats soient peu divergents, on prefere dans ces cas, utiliser la premiere methode. L9interaction entre les electrons pn: des halogenes et les orbitales d du silicium, est fortement mise en evidence par les potentiels d'ionisation individuels et par comparaison avec les spectres des composis analogues du carbone. Elle est montree aussi par quelques calculs empiriques qui confirment egalement l'attribution de spectres.I1 est aussi possible de montrer que les potentiels d'ionisation sont en accord avec !a force de la liaison entre le silicium et l'halogene, qui decroit dans la stquence: H3SiF > H3SiCI > H,SiBr.

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Section: Sih CLsupporting

confidence: 60%

Section: H3 Sifmentioning

confidence: 73%

Section: Sihclmentioning

confidence: 90%

“…and i.r. spectra with the literature values for the pure species (18,19). The samples were stored at -196" until used.…”

Section: Introductionmentioning

confidence: 86%

See 2 more Smart Citations

Photoelectron Spectra and Bonding in Some Halosilanes

Frost¹,

Herring²,

Katrib³

et al. 1971

Can. J. Chem.

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“…The peaks at 760 and 972 cm − 1 we continue to attribute to the Si\C bond stretching motion of the TO and LO phonons. The peak at 660 cm − 1 may also continue to be attributed to the LA phonon, or it may be more appropriate to attribute it to simply the symmetric Si\C stretch (ν s Si\C) [62][63][64][65]. The latter assignment is supported by the Cluster-Bethe-lattice (CBL) calculations of Lin and Chang for a-Si 1 − x C x :H films [66,67].…”

Section: Si\c Stretch Regionmentioning

confidence: 94%

Fourier transform infrared spectroscopy investigation of chemical bonding in low-k a-SiC:H thin films

King

French

Bielefeld

et al. 2011

Journal of Non-Crystalline Solids

100

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Models for the Hydrogen-Related Defect—Impurity Complexes and SiH Infrared Bands in Crystalline Silicon

Shi

Sahu

Oehrlein

et al. 1982

phys. stat. sol. (a)

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Based on the quantitative consideration of the chemical effect of nearest neighbor atoms on the bond character and IR vibration frequency of SiH bond in silane molecules, models are proposed for SiH vibration centers and related defect–impurity complexes in crystalline silicon to account for the multiplicity of experimentally observed SiH IR bands in c‐Si and their annealing behavior. Problems related to the models are discussed, and experiments to test the models are described.

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Silanes. Vibrational Assignments and Frequency Correlations

Cited by 37 publications

References 84 publications

Photoelectron Spectra and Bonding in Some Halosilanes

Photoelectron Spectra and Bonding in Some Halosilanes

Fourier transform infrared spectroscopy investigation of chemical bonding in low-k a-SiC:H thin films

Models for the Hydrogen-Related Defect—Impurity Complexes and SiH Infrared Bands in Crystalline Silicon

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