Fourier transform infrared spectroscopy investigation of chemical bonding in low-k a-SiC:H thin films

King, Sean W.; French, Marc; Bielefeld, J.; Lanford, W. A.

doi:10.1016/j.jnoncrysol.2011.04.001

Cited by 100 publications

(84 citation statements)

References 82 publications

(116 reference statements)

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“…In a previous article, we qualitatively examined the changes that occurred in transmission Fourier-Transform Infra-Red (FTIR) spectra of thin 3C-SiC and a-SiC x :H films as the mass density of these films was decreased from 3.2 to 1 g/cm 3 [1]. It was demonstrated that decreases in mass density were a direct result of increased hydrogen incorporation and decreased Si-C network bonding.…”

Section: Introductionmentioning

confidence: 99%

Mass and bond density measurements for PECVD a-SiCx:H thin films using Fourier transform-infrared spectroscopy

King

Bielefeld

French

et al. 2011

Journal of Non-Crystalline Solids

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Section: Introductionmentioning

confidence: 99%

Mass and bond density measurements for PECVD a-SiCx:H thin films using Fourier transform-infrared spectroscopy

King

Bielefeld

French

et al. 2011

Journal of Non-Crystalline Solids

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“…307,308 Based on the above SCC model, an additional desired requirement for a DB material would be immunity to SCC. Although a few studies have shown that a-SiC:H and related DB materials can react with ambient H 2 O, [309][310][311] the DCB studies of Matsuda have shown that the fracture energy of a-SiC:H and a-SiCN:H DB materials are insensitive to moisture in humidity levels ranging from 20 to 70%. 168,169 However, the fracture energy for a-SiCO:H DB materials were shown to be sensitive to moisture with the level of sensitivity being dependent on the concentration of Si-O-Si network bonding present in the material.…”

Section: Ecs Journal Of Solid State Science and Technology 4 (1) N30mentioning

confidence: 99%

“…Reductions in dielectric constant are primarily achieved via intentionally introducing controlled levels of nanoporosity through the incorporation of terminal hydrogen or organic groups during film deposition. 310,311 These terminal groups disrupt the SiC, Si 3 N 4 or SiO 2 network structure resulting in a material with increased free volume (and/or porosity). 66 The effective k of the material is then the volume average of the k for the free volume (k = 1) and that for the matrix.…”

Section: Current Status Of Low-k Db/ccl/es Materials and R And Dmentioning

confidence: 99%

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

King

2014

ECS J. Solid State Sci. Technol.

131

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Over the past decade, the primary focus for improving the performance of nano-electronic metal interconnect structures has been to reduce the impact of resistance-capacitance (RC) delays via utilizing insulating dielectrics with ever lower values of dielectric permittivity. The integration and implementation of such low dielectric constant (i.e. low-k) materials has been fraught with numerous challenges. For intermetal and interlayer (ILD) low-k dielectrics, these challenges have been largely associated to integration with metal interconnect fabrication processes and well documented and reviewed in the literature. Although equally important, less attention has been given to other low-k dielectrics utilized in metal interconnect structures that are commonly referred to as low-k dielectric barriers (DB), etch stops (ES), and/or Cu capping layers (CCL). These materials present numerous challenges as well for integration into metal interconnect fabrication processes. However, they also have more stringent integrated functionality requirements relative to low-k ILD materials that serve only a basic purpose of electrically isolating adjacent metal lines. In this article, we review the integration challenges and associated integrated functionality requirements for low-k DB/ES/CCL materials with a focus on the current status and future direction needed for these materials to facilitate both Moore's law (i.e. More Moore) and More than Moore scaling.

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“…Recently SiC has been shown to function as an insulator layer for resistive memory [15][16][17][18]. Amorphous SiC (a-SiC) has been considered a promising material which could be exploited for future CMOS interconnection dielectric and Cu diffusion barrier [19]. Potential integration of RMs in the back-end-of-line layer e.g.…”

Section: Introductionmentioning

confidence: 99%

Amorphous SiC resistive memory with embedded Cu nanoparticles

Fan

Jiang

Wang

et al. 2017

Microelectronic Engineering

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Amorphous SiC with embedded Cu nanoparticles (a-SiC:Cu) was investigated as the insulator layer of Cu/aSiC:Cu/Au resistive memory. The effect of the Cu embedding on resistive switching characteristics was studied for 20 and 30 vol% Cu. Reduced forming and SET voltages and increased endurance was observed for devices with 30Cu%. At the same time, all key advantageous characteristics of amorphous SiC resistive memory such as ON/OFF ratio of 10 7 and the co-existence of bipolar and unipolar modes were maintained upon Cu embedding. All above suggests that Cu embedding could be considered as a promising method to improve the overall performance of Cu/a-SiC:Cu/Au resistive memories.

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Fourier transform infrared spectroscopy investigation of chemical bonding in low-k a-SiC:H thin films

Cited by 100 publications

References 82 publications

Mass and bond density measurements for PECVD a-SiCx:H thin films using Fourier transform-infrared spectroscopy

Mass and bond density measurements for PECVD a-SiCx:H thin films using Fourier transform-infrared spectroscopy

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

Amorphous SiC resistive memory with embedded Cu nanoparticles

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