“…Compared to other techniques, such as chemical vapor deposition (CVD) [5], molecular beam epitaxy (MBE) [6], sol-gel synthesis [7] and pulsed laser deposition [8], ion implantation has several important advantages, including no synthesis-related impurities and precise control of the introduced metal ions and their depth distribution in the dielectric matrix [9]. Accordingly, nanoparticles of metals and metal oxides, such as copper (Cu) [10], gold (Au), nickel (Ni) [11], silver (Ag) [12], cobalt (Co) [13], etc., were synthesized by ion implantation in dielectrics such as SiO 2 [14], Al 2 O 3 [15], and even in MgO [16,17] or CeO 2 [13].…”