Significant pressure-induced enhancement of photoelectric properties of WS<sub>2</sub> in the near-infrared region

Zhang, Xueting; Dong, Qing; Li, Zonglun; Jing, Xiaoling; Liu, Ran; Liu, Bo; Zhao, Tingting; Lin, Tao; Li, Quanjun; Liu, Bingbing

doi:10.1080/21663831.2022.2065893

Cited by 12 publications

(7 citation statements)

References 68 publications

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“…An individual WS 2 photodetector fabricated within a diamond anvil cell setup exhibited an ultrafast response speed of 35 µs and broadband detection of 1650 nm (Figure 2c,d). [ 45 ] With increasing pressure, the photoelectronic properties of WS 2 devices significantly improve, especially for the optical communication waveband, where the photocurrent is enhanced by almost three orders of magnitude. The significantly improved photoelectric activity originates from the increase in photogenerated carriers and bandgap reduction resulting from the pressure‐induced enhancement of the S–S interlayer interaction.…”

Section: Pressure Engineering For Enhancement In Photoresponsementioning

confidence: 99%

“…Such an effective enhancement of photoelectric properties has never been observed in single TMDs. [ 45 ]…”

Section: Pressure Engineering For Enhancement In Photoresponsementioning

confidence: 99%

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confidence: 99%

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Photoelectric Properties of Functional Materials under High Pressure

Liu

et al. 2023

Advanced Physics Research

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The past decade has seen enormous interest in emerging photodetectors owing to their diverse applications in daily life and military fields. Tremendous progress has been made in the exploration and optimization of photoelectric materials. In particular, high pressure has been successfully adopted as a significant means to tune photoelectric properties. The remarkable enhancement in photocurrent by several orders of magnitude, induces inverse photoconductivity, and even extends the spectral response range, which was achieved by using the pressure strategy in several functional materials. In this prospective article, recent advances in pressure-regulated photoelectric properties of various functional materials are briefly elaborated on. In addition, the current challenges and possible research directions are discussed. It is sincerely hoped to inspire more new endeavors to promote further investigation of the photoelectric properties of functional materials under high pressure and provide more insights into exploring and optimizing novel photoelectric materials.

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Section: Pressure Engineering For Enhancement In Photoresponsementioning

confidence: 99%

“…Such an effective enhancement of photoelectric properties has never been observed in single TMDs. [ 45 ]…”

Section: Pressure Engineering For Enhancement In Photoresponsementioning

confidence: 99%

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Photoelectric Properties of Functional Materials under High Pressure

Liu

et al. 2023

Advanced Physics Research

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“…Among 2D materials used for SERS measurements, tungsten disulfide (WS 2 ) is a two-dimensional layered material that has recently attracted great interest in electronic and optoelectronic applications due to its high electron mobility, direct band gap, and strong absorption properties in the visible and near-infrared regions [13][14][15][16]. Recent research has also pointed out that the high sensitivity, good chemical stability, and excellent biocompatibility of WS 2 make it highly promising for SERS applications in detecting probe molecules [17][18][19].…”

Section: Introductionmentioning

confidence: 99%

The Role of GaN in the Heterostructure WS2/GaN for SERS Applications

Lin

et al. 2023

Materials

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In the application of WS2 as a surface–enhanced Raman scattering (SERS) substrate, enhancing the charge transfer (CT) opportunity between WS2 and analyte is an important issue for SERS efficiency. In this study, we deposited few-layer WS2 (2–3 layers) on GaN and sapphire substrates with different bandgap characteristics to form heterojunctions using a chemical vapor deposition. Compared with sapphire, we found that using GaN as a substrate for WS2 can effectively enhance the SERS signal, with an enhancement factor of 6.45 × 104 and a limit of detection of 5 × 10−6 M for probe molecule Rhodamine 6G according to SERS measurement. Analysis of Raman, Raman mapping, atomic force microscopy, and SERS mechanism revealed that The SERS efficiency increased despite the lower quality of the WS2 films on GaN compared to those on sapphire, as a result of the increased number of transition pathways present in the interface between WS2 and GaN. These carrier transition pathways could increase the opportunity for CT, thus enhancing the SERS signal. The WS2/GaN heterostructure proposed in this study can serve as a reference for enhancing SERS efficiency.

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“…Pressure, as a fundamental thermodynamic parameter, has been viewed as an effective means to regulate the physical and chemical properties of materials without introducing impurities. − Based on the pressure strategy, extensive research studies on the fundamental properties of materials have been reported, including pressure-induced phase transition, metallization, and pressure-enhanced photoluminescence, superconductivity, and photocurrents. − It has been reported that the optical properties of ZnSiP 2 can be significantly regulated by external pressure, as well as an emergent superconductivity occurs at 24.6 GPa . Lattice dynamical calculations indicated that ZnSnP 2 undergoes an order–disorder transition at around 6.5 GPa .…”

Section: Introductionmentioning

confidence: 99%

Significant Pressure-Enhanced Photoelectric Properties and Extended Spectral Response Range in Zn-Based Chalcopyrite ZnGeP₂

Fang,

Li,

et al. 2023

J. Phys. Chem. C

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As a commercial chalcopyrite, the ternary Zn-based semiconductor ZnGeP 2 is a promising material because of its economical and practical applications in photocatalytic, nonlinear optic, and photoelectric applications. Nevertheless, there is still an urgent need to explore an effective approach to further optimize the photoelectricrelated properties of ZnGeP 2 . Herein, the superior photoelectric properties of ZnGeP 2 with high photocurrent density (J ph ) of 1467 μA/cm 2 , and photoresponsivity (R) of 780.3 mA/W were obtained at 21.4 GPa, which enhanced 3 orders of magnitude higher compared with initial values. Intriguingly, the photoresponse range of ZnGeP 2 was extended to 1650 nm. Extensive high-pressure spectral analysis and theoretical simulation revealed that the metal phase (Fm3̅ m) started at 14.3 GPa, followed by a successive metallization process dominated by a mixed-phase state up to 23.3 GPa, which contributed to the significant pressure-enhanced photoelectric properties of ZnGeP 2 . These findings demonstrate significant improvement of the photoelectric properties in ZnGeP 2 via external pressure, which also provides methods to modify the photoelectric properties of other chalcopyrites.

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Significant pressure-induced enhancement of photoelectric properties of WS₂ in the near-infrared region

Cited by 12 publications

References 68 publications

Photoelectric Properties of Functional Materials under High Pressure

Photoelectric Properties of Functional Materials under High Pressure

The Role of GaN in the Heterostructure WS2/GaN for SERS Applications

Significant Pressure-Enhanced Photoelectric Properties and Extended Spectral Response Range in Zn-Based Chalcopyrite ZnGeP₂

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Significant pressure-induced enhancement of photoelectric properties of WS2 in the near-infrared region

Cited by 12 publications

References 68 publications

Photoelectric Properties of Functional Materials under High Pressure

Photoelectric Properties of Functional Materials under High Pressure

The Role of GaN in the Heterostructure WS2/GaN for SERS Applications

Significant Pressure-Enhanced Photoelectric Properties and Extended Spectral Response Range in Zn-Based Chalcopyrite ZnGeP2

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Significant pressure-induced enhancement of photoelectric properties of WS₂ in the near-infrared region

Significant Pressure-Enhanced Photoelectric Properties and Extended Spectral Response Range in Zn-Based Chalcopyrite ZnGeP₂