Signal-to-noise ratio of Geiger-mode avalanche photodiode single-photon counting detectors

Kolb, Kimberly

doi:10.1117/1.oe.53.8.081904

Cited by 21 publications

(9 citation statements)

References 11 publications

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“…Various SPAD models have been presented in literature to predict the actual behavior and choose suitable parameters during the design phase to ensure the optimal performance for CMOS SPAD systems in existing and new applications [29,[35][36][37][38][39][40][41][42][43][44][45][46][47]. State of the art SPAD modeling approaches can be grouped in three sub groups named as model based on device physics, circuit simulation model, and model based on information theory.…”

Section: State-of-the-art Spad Modelsmentioning

confidence: 99%

“…SPAD stochastic phenomena affect the switching behavior of the device and define the transition from no-avalanche to avalanche (turn-on) and vice versa. In order to provide a more realistic simulation platform, more comprehensive models [34,[42][43][44][45] include stochastic nature of Geiger mode operation based on theoretical equations of dark count rate, breakdown probability, signal-to-noise ratio and afterpulsing probability.…”

Section: Circuit Simulation Modelmentioning

confidence: 99%

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Modeling Emerging Semiconductor Devices for Circuit Simulation

Hasan¹,

Shawkat²,

Amer³

et al. 2020

Computational Models in Engineering

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Circuit simulation is an indispensable part of modern IC design. The significant cost of fabrication has driven researchers to verify the chip functionality through simulation before submitting the design for final fabrication. With the impending end of Moore's Law, researchers all over the world are looking for new devices with enhanced functionality. A plethora of promising emerging devices has been proposed in recent years. In order to leverage the full potential of such devices, circuit designers need fast, reliable models for SPICE simulation to explore different applications. Most of these new devices have complex underlying physical mechanism rendering the model development an extremely challenging task. For the models to be of practical use, they have to enable fast and accurate simulation that rules out the possibility of numerically solving a system of partial differential equations to arrive at a solution. In this chapter, we show how different modeling approaches can be used to simulate three emerging semiconductor devices namely, silicon-oninsulator four gate transistor(G 4 FET), perimeter gated single photon avalanche diode (PG-SPAD) and insulator-metal transistor (IMT) device with volatile memristance. All the models have been verified against experimental /TCAD data and implemented in commercial circuit simulator.

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Section: State-of-the-art Spad Modelsmentioning

confidence: 99%

Section: Circuit Simulation Modelmentioning

confidence: 99%

Modeling Emerging Semiconductor Devices for Circuit Simulation

Hasan¹,

Shawkat²,

Amer³

et al. 2020

Computational Models in Engineering

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Section: State-of-the-art Spad Modelsmentioning

confidence: 99%

Computational Models in Engineering

Волков¹

2020

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UK). His areas of expertise cover multidisciplinary areas: from design and optimization of energy systems to fundamental problems focused on modelling and simulation of turbulent multi-phase flows. He is a Chartered Engineer and member of the Institute of Physics, Institution of Mechanical Engineers, Combustion Institute, and Higher Education Academy. He is the author of more than 120 scientific papers and a member of editorial boards and scientific committees of a number of journals and conferences. ContentsPreface XIIIChapter 1 1 Technology of 3D Simulation of High-Speed Damping Processes in the Hydraulic Brake Device

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“…The authors of [1] derive an SNR definition for SPADs in single-or multi-event [2,3] acquisition mode which is the basis for this work. An extension of this definition is given by [4] representing afterpulsing effects in gated SPADs, which are assumed to be negligible in this work through the use of a sufficiently long dead time.…”

Section: Introductionmentioning

confidence: 99%

Analytical Evaluation of Signal-to-Noise Ratios for Avalanche- and Single-Photon Avalanche Diodes

Buchner

Hadrath

Burkard

et al. 2021

Sensors

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Performance of systems for optical detection depends on the choice of the right detector for the right application. Designers of optical systems for ranging applications can choose from a variety of highly sensitive photodetectors, of which the two most prominent ones are linear mode avalanche photodiodes (LM-APDs or APDs) and Geiger-mode APDs or single-photon avalanche diodes (SPADs). Both achieve high responsivity and fast optical response, while maintaining low noise characteristics, which is crucial in low-light applications such as fluorescence lifetime measurements or high intensity measurements, for example, Light Detection and Ranging (LiDAR), in outdoor scenarios. The signal-to-noise ratio (SNR) of detectors is used as an analytical, scenario-dependent tool to simplify detector choice for optical system designers depending on technologically achievable photodiode parameters. In this article, analytical methods are used to obtain a universal SNR comparison of APDs and SPADs for the first time. Different signal and ambient light power levels are evaluated. The low noise characteristic of a typical SPAD leads to high SNR in scenarios with overall low signal power, but high background illumination can saturate the detector. LM-APDs achieve higher SNR in systems with higher signal and noise power but compromise signals with low power because of the noise characteristic of the diode and its readout electronics. Besides pure differentiation of signal levels without time information, ranging performance in LiDAR with time-dependent signals is discussed for a reference distance of 100 m. This evaluation should support LiDAR system designers in choosing a matching photodiode and allows for further discussion regarding future technological development and multi pixel detector designs in a common framework.

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Signal-to-noise ratio of Geiger-mode avalanche photodiode single-photon counting detectors

Cited by 21 publications

References 11 publications

Modeling Emerging Semiconductor Devices for Circuit Simulation

Modeling Emerging Semiconductor Devices for Circuit Simulation

Computational Models in Engineering

Analytical Evaluation of Signal-to-Noise Ratios for Avalanche- and Single-Photon Avalanche Diodes

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