Modeling Emerging Semiconductor Devices for Circuit Simulation

Abstract

Circuit simulation is an indispensable part of modern IC design. The significant cost of fabrication has driven researchers to verify the chip functionality through simulation before submitting the design for final fabrication. With the impending end of Moore's Law, researchers all over the world are looking for new devices with enhanced functionality. A plethora of promising emerging devices has been proposed in recent years. In order to leverage the full potential of such devices, circuit designers need fast, reliable models for SPICE simulation to explore different applications. Most of these new devices have complex underlying physical mechanism rendering the model development an extremely challenging task. For the models to be of practical use, they have to enable fast and accurate simulation that rules out the possibility of numerically solving a system of partial differential equations to arrive at a solution. In this chapter, we show how different modeling approaches can be used to simulate three emerging semiconductor devices namely, silicon-oninsulator four gate transistor(G 4 FET), perimeter gated single photon avalanche diode (PG-SPAD) and insulator-metal transistor (IMT) device with volatile memristance. All the models have been verified against experimental /TCAD data and implemented in commercial circuit simulator.