2020
DOI: 10.1109/tcpmt.2020.2984268
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Signal Integrity Design and Analysis of 3-D X-Point Memory Considering Crosstalk and IR Drop for Higher Performance Computing

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Cited by 13 publications
(6 citation statements)
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“…First, current on the shortest path is higher for smaller process nodes. This is because, with technology scaling, the value of parasitic resistances along the bitline and wordline of a current path increases [38], [43], [44]. The unit wordline (bitline) parasitic resistance ranges from approximately 2.5Ω (1Ω) at 65nm node to 10Ω (3.8Ω) at 16nm node.…”
Section: Analyzing Technology-specific Current Asymmetry In Memristiv...mentioning
confidence: 99%
“…First, current on the shortest path is higher for smaller process nodes. This is because, with technology scaling, the value of parasitic resistances along the bitline and wordline of a current path increases [38], [43], [44]. The unit wordline (bitline) parasitic resistance ranges from approximately 2.5Ω (1Ω) at 65nm node to 10Ω (3.8Ω) at 16nm node.…”
Section: Analyzing Technology-specific Current Asymmetry In Memristiv...mentioning
confidence: 99%
“…The conductance values of parameters in a PCM cell listed in Table III. In this work, we adopt the RESET current (I RESET ) of 100µA with RESET Time (t RESET ) of 15ns, and SET time (t SET ) of 80ns with the assumption of SET current (I SET ) of 50µA (= I RESET 2 ) [7], [8].…”
Section: Supplementary Materials a Pcm Parametersmentioning
confidence: 99%
“…The operation and performance of 3D XPoint as a memory unit are discussed in [7]- [11]. In our work, rather than focusing again on the memory aspects of 3D XPoint, we explore the possibility of exploiting 3D XPoint arrays to perform inmemory computation.…”
Section: Introductionmentioning
confidence: 99%
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“…First, current on the shortest path is higher for smaller process nodes. This is because, with technology scaling, the value of parasitic resistances along the bitline and wordline of a current path increases [44], [49], [50]. The unit wordline (bitline) parasitic resistance ranges from approximately 2.5Ω (1Ω) at 65nm node to 10Ω (3.8Ω) at 16nm node.…”
Section: Analyzing Technology-specific Current Asymmetry In Memristiv...mentioning
confidence: 99%