2022
DOI: 10.1109/tpds.2021.3065591
|View full text |Cite
|
Sign up to set email alerts
|

Endurance-Aware Mapping of Spiking Neural Networks to Neuromorphic Hardware

Abstract: Neuromorphic computing systems are embracing memristors to implement high density and low power synaptic storage as crossbar arrays in hardware. These systems are energy efficient in executing Spiking Neural Networks (SNNs). We observe that long bitlines and wordlines in a memristive crossbar are a major source of parasitic voltage drops, which create current asymmetry. Through circuit simulations, we show the significant endurance variation that results from this asymmetry. Therefore, if the critical memristo… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

0
37
0

Year Published

2022
2022
2024
2024

Publication Types

Select...
5
2
1

Relationship

3
5

Authors

Journals

citations
Cited by 46 publications
(41 citation statements)
references
References 67 publications
(75 reference statements)
0
37
0
Order By: Relevance
“…In a recent work, we have shown that the unit parasitic resistance of bitlines/wordlines increases from 1Ω at 65 nm to 3.8Ω at 16 nm [10]. Such increase in the value of parasitic resistance leads to a higher voltage applied across each OxRRAM cell in the crossbar, which further reduces its state transition time.…”
Section: B Read Disturbance Issues Of Oxrram Cellsmentioning
confidence: 97%
See 1 more Smart Citation
“…In a recent work, we have shown that the unit parasitic resistance of bitlines/wordlines increases from 1Ω at 65 nm to 3.8Ω at 16 nm [10]. Such increase in the value of parasitic resistance leads to a higher voltage applied across each OxRRAM cell in the crossbar, which further reduces its state transition time.…”
Section: B Read Disturbance Issues Of Oxrram Cellsmentioning
confidence: 97%
“…This is due to an increase in the voltage within the crossbar at scaled nodes. Second, the variation of state transition time increases at smaller nodes due to higher voltage and current variations [10]. Finally, the state transition time of OxRRAM cells also depends on the resistance state.…”
Section: B Read Disturbance Issues Of Oxrram Cellsmentioning
confidence: 99%
“…This is obtained from the propagation delay of current through the synaptic elements in the crossbar. As shown in many recent works [99,100,102], the current propagation delay within a crossbar depends on the speciic synaptic elements that are being activated in the crossbar. This is due to the diference in the amount of parasitic components on the bitlines and wordlines of a crossbar along the diferent current paths.…”
Section: Definition 7 (Digraph)mentioning
confidence: 99%
“…DecomposeSNN [16] decomposes an SNN to improve the cluster utilization. There are also performance-oriented SNN mapping approaches such as [7,11,15,86], energy-aware SNN mapping approaches such as [101], circuit aging-aware SNN mapping approaches such as [10,67,84,88,91], endurance-aware SNN mapping approaches such as [93,99,102], and thermal-aware SNN mapping approaches such as [100]. These approaches are evaluated with emerging SNN based applications [9,31,43,50,64,75], which we also use to evaluate DFSynthesizer.…”
Section: Related Workmentioning
confidence: 99%
“…Each cluster can then fit onto a tile of the hardware. Then, the clusters are mapped to the tiles to optimize one or more hardware metrics such as energy [47,48], latency [49][50][51][52][53], circuit aging [54][55][56][57][58][59], and endurance [60][61][62]. We use the energy-aware mapping technique of [48].…”
mentioning
confidence: 99%