SiGeC alloy layer formation by high-dose C+ implantations into pseudomorphic metastable Ge0.08Si0.92 on Si(100)

Abstract

Dual-energy carbon implantation (1ϫ10 16 /cm 2 at 150 and at 220 keV͒ was performed on 260-nm-thick undoped metastable pseudomorphic Si͑100͒/ Ge 0.08 Si 0.92 with a 450-nm-thick SiO 2 capping layer, at either room temperature or at 100°C. After removal of the SiO 2 the samples were measured using backscattering/channeling spectrometry and double-crystal x-ray diffractometry. A 150-nm-thick amorphous layer was observed in the room temperature implanted samples. This layer was found to have regrown epitaxially after sequential annealing at 550°C for 2 h plus at 700°C for 30 min. Following this anneal, tensile strain, believed to result from a large fraction of substitutional carbon in the regrown layer, was observed. Compressive strain, that presumably arises from the damaged but nonamorphized portion of the GeSi layer, was also observed. This strain was not significantly affected by the annealing treatment. For the samples implanted at 100°C, in which case no amorphous layer was produced, only compressive strain was observed. For samples implanted at both room temperature and 100°C, the channelled backscattering yield from the Si substrate was the same as that of the virgin sample.

The Loss Kinetics of Substitutional Carbon in Si1-xCx Regrown by Solid Phase Epitaxy

“…However, due to the low solubility of carbon in Si, β-SiC can be formed during epitaxial regrowth. [6][7][8]12) Moreover, because carbon retards the SPE rates, a higher regrowth temperature is necessary. [13][14][15][16] Despite these conflicting problems, Strane et al [14][15][16] have shown that carbon can be successfully incorporated into the substitutional sites using ion implantation followed by SPE.…”

Composition dependent energy band gaps for the ternary alloy Si1−x−yGexCy

“…This prospect would allow for tuning the lattice constant and band gap independently by adjusting the composition ratios and offers an additional degree of freedom for band gap engineering, which is not attainable by standard Si technology or SiGe heteroepitaxy [6]. However there are limitations on achieving complete substitution due to the low solubility of C in Si and the tendency of carbon to form silicon carbide, or C-C bonds [5].The energy band gaps and the lattice constants of the alloy are important parameters for device design. However, very little theoretical or experimental work on the alloy Si 1ÀxÀy Ge x C y has been reported.…”

“…Incoporation of a low carbon concentration into substitutional sites of SiGe might be able to relieve the inherent strain of the SiGe layers grown on a Si substrate [1][2][3][4][5] while changing the band gap energy. This prospect would allow for tuning the lattice constant and band gap independently by adjusting the composition ratios and offers an additional degree of freedom for band gap engineering, which is not attainable by standard Si technology or SiGe heteroepitaxy [6].…”

Ligas amorfas de germânio-carbono e germânio-nitrogênio hidrogenados

“…Assim, o carbono atua como um redutor de parâmetro de rede da liga cristalina temária SiGeC. Desta forma, obtém-se um material com boas propriedades do SiGe e com um parâmetro de rede adequado para o silicio [34][35][36][37][38][39][40][41][42][43][44][45][46][47][48].…”