SiGe quantum well thermistor materials

Wissmar, Stanley; Radamsson, H.H.; Yamamoto, Yuji; Tillack, Bernd; Vieider, C.; Andersson, Jan Y.

doi:10.1016/j.tsf.2008.08.164

Cited by 18 publications

(15 citation statements)

References 2 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The MQW Si/SiGe microbolometers have been shown to be superior in terms of TCR to conventional thin film materials used in bolometers such as vanadium oxide and amorphous silicon, with TCR increases thanks to higher Ge content in SiGe layers [1][2][3][4][5]. The on-wafer IV measurements of the triple stack bolometer devices for various Ge content were carried out in a probe station with thermal control with 5 K steps.…”

Section: Bolometer Emulationmentioning

confidence: 99%

“…The TCR is found to be increasing as the bolometer devices' Ge content increases. However, the detector resistance also increases considerably as the increase in Ge content causes more valence band offset [3] [5]. While resistance increase results in lower Joule power dissipation for a constant voltage bias and consequently lower self-heating in the bolometers, high resistance is not ideal in terms of detector noise and responsivity.…”

Section: Bolometer Emulationmentioning

confidence: 99%

See 1 more Smart Citation

A low-power CMOS readout IC with on-chip column-parallel SAR ADCs for microbolometer applications

Shafique

Ceylan

Yazıcı

et al. 2018

Infrared Technology and Applications XLIV

View full text Add to dashboard Cite

A readout IC (ROIC) designed for high temperature coefficient of resistance (TCR) SiGe microbolometers is presented. The ROIC is designed for higher Ge content SiGe microbolometers which have higher detector resistance (~1M Ω) and higher TCR values (~%5.5/K). The ROIC includes column SAR ADCs for on-chip column-parallel analog to digital conversion. SAR ADC architecture is chosen to reduce the overall power consumption. The problem of resistance variation across the bolometers which introduce fixed pattern noise is addressed by setting a tunable reference resistor shared for each column which can be calibrated offline to set the common-mode level. Moreover, column non-uniformity has been reduced through comparator offset compensation in the SAR ADC. The columnwise architecture in this work reduces the number of integrators needed in the architecture and enables 17x17 µm2 pixel sizes. The prototype has been designed and fabricated in 0.25-µm CMOS process.

show abstract

Section: Bolometer Emulationmentioning

confidence: 99%

Section: Bolometer Emulationmentioning

confidence: 99%

A low-power CMOS readout IC with on-chip column-parallel SAR ADCs for microbolometer applications

Shafique

Ceylan

Yazıcı

et al. 2018

Infrared Technology and Applications XLIV

View full text Add to dashboard Cite

show abstract

Section: Bolometer Emulationmentioning

confidence: 99%

A low-power CMOS readout IC design for bolometer applications

Galioğlu

Abbasi

Shafique

et al. 2017

Infrared Technology and Applications XLIII

View full text Add to dashboard Cite

A prototype of a readout IC (ROIC) designed for use in high temperature coefficient of resistance (TCR) SiGe microbolometers is presented. The prototype ROIC architecture implemented is based on a bridge with active and blind bolometer pixels with a capacitive transimpedance amplifier (CTIA) input stage and column parallel integration with serial readout. The ROIC is designed for use in high (≥ 4 %/K) TCR and high detector resistance Si/SiGe microbolometers with 17x17 µm 2 pixel sizes in development. The prototype has been designed and fabricated in 0.25-µm SiGe:C BiCMOS process.

show abstract

“…Polycrystalline SiGe (poly-SiGe, T CR = 2%/K) [6], α-SiGe (T CR = 4.7%/K) [7], and SiGe multi-quantum-well (MQW) (T CR < 3.5%/K) [8]- [12] structures have gathered much attention due to their high TCR values. Among these, single crystal structures of SiGe MQWs exhibit the best 1/f noise performance due to high level of order and material quality.…”

Section: Introductionmentioning

confidence: 99%

“…Recently, by incorporating carbon in SiGe quantum well layers, TCR values up to 4.5%/K were also demonstrated [13]. High Ge content in such MQW structures are shown to increase TCR values, but all efforts so far were limited to below 35% Ge content (T CR < 3.5%/K) due to the large lattice mismatch between Si and Ge, limiting the TCR value to below 3.5%/K in SiGe layers without incorporating other species [8]- [12]. Therefore, there is a need for further increasing the TCR of CMOS compatible materials with good crystal quality, beyond the improvement levels obtained using high Ge content SiGe MQW structures.…”

Section: Introductionmentioning

confidence: 99%

Ge/SiGe Quantum Well p-i-n Structures for Uncooled Infrared Bolometers

Atar

Yeşilyurt

Onbaşlı

et al. 2011

IEEE Electron Device Lett.

View full text Add to dashboard Cite

Cataloged from PDF version of article.The temperature dependence of current is\ud investigated experimentally for silicon–germanium (Si-Ge)\ud multi-quantum-well p-i-n devices on Si substrates as uncooled\ud bolometer active layers. Temperature coefficient of resistance\ud values as high as −5.8%/K are recorded. This value is\ud considerably higher than that of even commercial bolometer\ud materials in addition to being well above the previous efforts\ud based on CMOS compatible materials

show abstract

SiGe quantum well thermistor materials

Cited by 18 publications

References 2 publications

A low-power CMOS readout IC with on-chip column-parallel SAR ADCs for microbolometer applications

A low-power CMOS readout IC with on-chip column-parallel SAR ADCs for microbolometer applications

A low-power CMOS readout IC design for bolometer applications

Ge/SiGe Quantum Well p-i-n Structures for Uncooled Infrared Bolometers

Contact Info

Product

Resources

About