SiGe HBTs and BiCMOS Technology for Present and Future Millimeter-Wave Systems

Zimmer, Thomas; Böck, J.; Buchali, Fred; Chevalier, Pascal; Collisi, Michael; Debaillie, Björn; Deng, Mingke; Ferrari, Philippe; Fregonèse, Sébastien; Gaquière, C.; Ghanem, Haitham; Hettrich, Horst; Karakuzulu, Alper; Maiwald, Tim; Margalef‐Rovira, Marc; Maye, Caroline; Möller, Michael; Mukherjee, A.; Rücker, H.; Sakalas, P.; Schmid, Rolf; Schneider, Karina; Schuh, Karsten; Templ, Wolfgang; Visweswaran, Akshay; Zwick, Thomas

doi:10.1109/jmw.2020.3031831

Cited by 52 publications

(28 citation statements)

References 51 publications

(63 reference statements)

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“…This trend of room-temperature electronic THz oscillators, from initial works demonstrating their potential using CMOS-based transistors [58][59][60], heterojunction bipolar transistors (HBTs) of SiGe- [63] and InP-based structures [64], up to now, experienced essential progress. One can mention, for instance, highly linear ultra-wideband amplification with a gain bandwidth product of 1.75 THz [443] and mW range power in SiGe [444], respectively. The elegant solution to combine them for 3D imaging applications near 600 GHz using a set of oscillators based 250 nm InP HBT technology and a heterodyne image receiver based on 130 nm SiGe HBT technology has been demonstrated very recently [445].…”

Section: Summary Systems Integration and Possible Extrapolations In Thz Imagingmentioning

confidence: 99%

Roadmap of Terahertz Imaging 2021

Valušis

Lisauskas

Yuan

et al. 2021

Sensors

178

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In this roadmap article, we have focused on the most recent advances in terahertz (THz) imaging with particular attention paid to the optimization and miniaturization of the THz imaging systems. Such systems entail enhanced functionality, reduced power consumption, and increased convenience, thus being geared toward the implementation of THz imaging systems in real operational conditions. The article will touch upon the advanced solid-state-based THz imaging systems, including room temperature THz sensors and arrays, as well as their on-chip integration with diffractive THz optical components. We will cover the current-state of compact room temperature THz emission sources, both optolectronic and electrically driven; particular emphasis is attributed to the beam-forming role in THz imaging, THz holography and spatial filtering, THz nano-imaging, and computational imaging. A number of advanced THz techniques, such as light-field THz imaging, homodyne spectroscopy, and phase sensitive spectrometry, THz modulated continuous wave imaging, room temperature THz frequency combs, and passive THz imaging, as well as the use of artificial intelligence in THz data processing and optics development, will be reviewed. This roadmap presents a structured snapshot of current advances in THz imaging as of 2021 and provides an opinion on contemporary scientific and technological challenges in this field, as well as extrapolations of possible further evolution in THz imaging.

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Section: Summary Systems Integration and Possible Extrapolations In Thz Imagingmentioning

confidence: 99%

Roadmap of Terahertz Imaging 2021

Valušis

Lisauskas

Yuan

et al. 2021

Sensors

178

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“…Such integration allows low-power signal distribution between the RF blocks, the analog blocks, and the digital circuit parts to process the information, which makes silicon-based processes advantageous in mitigating the Von Neumann bottleneck that easily consumes more than 70 % of the total power [10] . In addition, the silicon-based devices keep evolving.…”

Section: Thz Power Generationmentioning

confidence: 99%

“…In addition, the silicon-based devices keep evolving. SiGe HBT indicates a cutoff frequency beyond 1 THz to be realized in the future [11,12] . In this article, while we focus our discussion on silicon-based devices, the methodology can be easily extended into general solid-state devices.…”

Section: Thz Power Generationmentioning

confidence: 99%

Integrated Intelligent Electromagnetic Radiator Design for Future THz Communication: A Review

Venkatesh

Saeidi

et al. 2022

Chinese J of Electronics

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Advances in 6G communication changes how machines and humans interact. The blossom of new applications demands significantly higher data bandwidth while preserving the mobility and sustainability of electronic wireless communication systems. It also demands an integrable system that allows convenient interactions between communication units and signal processing units. A review of CMOS-based THz communication system solutions is presented, with a focus on novel systematic EM-circuit co-design philosophy. This review starts with a review of THz power generation, followed by the discussion of THz localization and THz beamforming for efficient high-throughput communication.

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“…transistor in the linear region) behaves as an open circuit. This can be demonstrated by the fact that the impedance seen at the input, 𝑍𝑍 𝑖𝑖𝑖𝑖 , of a short-circuited stub is equivalent to an open-circuit, when the electrical length of the stub, 𝜃𝜃, equals 𝜋𝜋/2 rad, as shown in (1):…”

Section: Proposed Approachmentioning

confidence: 99%

“…The increase in the operating frequencies has been backed by major developments in the silicon-based technologies, such as high-performance (Bi)CMOS integrated technologies. For instance, in the recent years, these technologies are steadily moving their frequency-handling capabilities up to the sub-THz band, with transistors currently reporting 𝑓𝑓 𝑇𝑇 /𝑓𝑓 𝑚𝑚𝑚𝑚𝑚𝑚 of around 500/600 GHz [1], [2]. Silicon-based technologies, as opposed to III-V technologies, offer mass production at a relatively low cost, miniaturized footprints and the possibility to integrate logic and signal analysis in the same die.…”

Section: Introductionmentioning

confidence: 99%

mm-Wave Single-Pole Double-Throw switches: HBT- vs MOSFET-based designs

Margalef‐Rovira

Gaquière

Souza

et al. 2021

2021 19th IEEE International New Circuits and Systems Conference (NEWCAS)

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This paper aims to compare the performance of HBT-based and MOSFET-based mm-Wave SPDT switches in a single BiCMOS technology. To the best of authors' knowledge, a direct comparison of this function in the same integrated process has never been reported before. Measurement results on two 50-GHz integrated SPDTs reveal that the HBT-based SPDT switch yields 1.7 dB of insertion loss and 14 dB of isolation in its central frequency, with a bandwidth covering the 30-80 GHz frequency range when considering a return loss greater than 10 dB. On the other hand, the MOSFET-based SPDT switch yields 2.1 dB of insertion loss and 12 dB of isolation at center frequency and a bandwidth covering the 33-80 GHz frequency range.

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SiGe HBTs and BiCMOS Technology for Present and Future Millimeter-Wave Systems

Cited by 52 publications

References 51 publications

Roadmap of Terahertz Imaging 2021

Roadmap of Terahertz Imaging 2021

Integrated Intelligent Electromagnetic Radiator Design for Future THz Communication: A Review

mm-Wave Single-Pole Double-Throw switches: HBT- vs MOSFET-based designs

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