SiGe HBT noise parameters extraction using in-situ silicon integrated tuner in MMW range 60&amp;#x2013;110GHz

Tagro, Y.; Gloria, D.; Boret, S.; Lepillet, S.; Dambrine, G.

doi:10.1109/bipol.2009.5314138

Cited by 4 publications

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“…Thus, in order to generate various load impedances, we use an in situ integrated tuner, which is connected directly to the output of the transistor; thereby the reflection factor generated can be improved. Such devices have already been used for the extraction of noise parameters in the 60-110 GHz [3] and 70-170 GHz [4] frequency ranges. However, the challenge is not only to design tuners in the G-band, but also considering the linearity constraints in order to improve power measurements.…”

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confidence: 99%

In situ integrated tuner approach for load‐pull measurement of Si/SiGe:C HBT at 200 GHz

et al. 2014

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Load impedance variations were obtained using an innovative integrated tuner at G-band. The 200 GHz load-pull measurements on a silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) are presented. First, the linearity of the integrated tuner is checked. Then, the main load-pull characteristics are extracted from a 0.13 × 3 µm 2 emitter area SiGe HBT. The aim of this study is to provide a solution to avoid losses related to probes and commercial tuners. Thereby, from design to measurements, power setup architecture, calibration and performances at 200 GHz are performed in a non-50 Ω environment. Finally, comparisons between measurements and simulation from a high current model (HICUM) show good agreement, demonstrating the capability of the measurement approach.

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confidence: 99%