mm-Wave noise modeling in advanced SiGe and InP HBTs

Sakalas, P.; Schröter, M.; Zirath, Herbert

doi:10.1007/s10825-015-0664-6

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B Noise1

Evaluation Of Noise On Hpt1

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2023

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Cited by 12 publications

(2 citation statements)

References 36 publications

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“…At not too low temperatures, noise has been described very accurately by HICUM/L2 as was demonstrated in, e.g., [24]. This accuracy stems from the equivalent circuit and the model formulations.…”

Section: B Noisementioning

confidence: 65%

Advanced SiGe:C HBTs at Cryogenic Temperatures and Their Compact Modeling With Temperature Scaling

Jin

Müller

Sakalas

et al. 2021

IEEE J. Explor. Solid-State Comput. Devices Circuits

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Section: B Noisementioning

confidence: 65%

Advanced SiGe:C HBTs at Cryogenic Temperatures and Their Compact Modeling With Temperature Scaling

Jin

Müller

Sakalas

et al. 2021

IEEE J. Explor. Solid-State Comput. Devices Circuits

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“…Furthermore, in the noise study system we have developed, we can consider the base current and collector current as independent variables, allowing us to treat the noises as non-interdependent [36].…”

Section: Evaluation Of Noise On Hptmentioning

confidence: 99%

Design electrical model noise and perform nonlinearities of SiGe bipolar phototransistor

Diop

Polleux

Algani

et al. 2023

ijirss

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This study uses a new model developed in this paper to investigate the performance of a heterojunction phototransistor (HPT) on SiGe technology. An electrical model of an optical window phototransistor was developed based on the Ebers & Moll model, and its performance was evaluated by examining the error vector magnitude (EVM) when integrated into a mobile communication setup. Simulations showed that the HPT exhibited an EVM lower than 8%, enabling 64-Quadrature Amplitude Modulation (64-QAM) modulation for the mobile network. The third-order intercept point (IP3) measured 22 dBm, making the HPT suitable for Radio over Fiber (RoF) links in the detection block. The noise model of the HPT was also studied, resulting in a favorable power spectral density (PSD) that facilitates accurate modeling and prediction of the noise behavior of HPTs across various applications. This study provides valuable insights into the performance of HPTs on SiGe technology, enabling the development of more precise and efficient models for future research and practical applications. The results carry significant implications for the use of HPTs in optical communication systems.

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Parasitic Parameters Extraction for InP DHBT Based on EM Method and Validation up to H-Band

Zhang

Wang

et al. 2017

J Infrared Milli Terahz Waves

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mm-Wave noise modeling in advanced SiGe and InP HBTs

Cited by 12 publications

References 36 publications

Advanced SiGe:C HBTs at Cryogenic Temperatures and Their Compact Modeling With Temperature Scaling

Advanced SiGe:C HBTs at Cryogenic Temperatures and Their Compact Modeling With Temperature Scaling

Design electrical model noise and perform nonlinearities of SiGe bipolar phototransistor

Parasitic Parameters Extraction for InP DHBT Based on EM Method and Validation up to H-Band

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