SiGe HBT modeling for mm-wave circuit design

Pawlak, Andreas; Lehmann, Steffen; Sakalas, P.; Krause, Jörg; Aufinger, Klaus; Ardouin, Bertrand; Schröter, M.

doi:10.1109/bctm.2015.7340560

Cited by 17 publications

(7 citation statements)

References 23 publications

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“…At present, it is generally considered that the scalable high-current model (HICUM) [113] is able to follow the HBT (or bipolar in general) technology scaling with a lag of only a few technology node generations (to allow for model extraction for a wide range of transistor sizes and configurations to be performed). The main characteristics of this physics-based model is its ability to be expanded by either adding new model parameters [44] or updating the old parameters [114] as technologies evolve and new device physics effects are discovered by simulation, characterization or experimentation. Figure 8 shows two variations of HICUM level 2 (L2) developed around 15 years apart, in 1999 [115] and 2015 [44] respectively.…”

Section: Modeling For Re-engineered Terahertz Researchmentioning

confidence: 99%

“…The main characteristics of this physics-based model is its ability to be expanded by either adding new model parameters [44] or updating the old parameters [114] as technologies evolve and new device physics effects are discovered by simulation, characterization or experimentation. Figure 8 shows two variations of HICUM level 2 (L2) developed around 15 years apart, in 1999 [115] and 2015 [44] respectively. The model from 1999 (Figure 8a) is already much more comprehensive than the small-signal model presented in Figure 7, and it was suitable for HBTs with the intention of operating the microwave range at the time of development.…”

Section: Modeling For Re-engineered Terahertz Researchmentioning

confidence: 99%

See 1 more Smart Citation

Emerging Transistor Technologies Capable of Terahertz Amplification: A Way to Re-Engineer Terahertz Radar Sensors

Božanić

Sinha

2019

Sensors

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This paper reviews the state of emerging transistor technologies capable of terahertz amplification, as well as the state of transistor modeling as required in terahertz electronic circuit research. Commercial terahertz radar sensors of today are being built using bulky and expensive technologies such as Schottky diode detectors and lasers, as well as using some emerging detection methods. Meanwhile, a considerable amount of research effort has recently been invested in process development and modeling of transistor technologies capable of amplifying in the terahertz band. Indium phosphide (InP) transistors have been able to reach maximum oscillation frequency (fmax) values of over 1 THz for around a decade already, while silicon-germanium bipolar complementary metal-oxide semiconductor (BiCMOS) compatible heterojunction bipolar transistors have only recently crossed the fmax = 0.7 THz mark. While it seems that the InP technology could be the ultimate terahertz technology, according to the fmax and related metrics, the BiCMOS technology has the added advantage of lower cost and supporting a wider set of integrated component types. BiCMOS can thus be seen as an enabling factor for re-engineering of complete terahertz radar systems, for the first time fabricated as miniaturized monolithic integrated circuits. Rapid commercial deployment of monolithic terahertz radar chips, furthermore, depends on the accuracy of transistor modeling at these frequencies. Considerations such as fabrication and modeling of passives and antennas, as well as packaging of complete systems, are closely related to the two main contributions of this paper and are also reviewed here. Finally, this paper probes active terahertz circuits that have already been reported and that have the potential to be deployed in a re-engineered terahertz radar sensor system and attempts to predict future directions in re-engineering of monolithic radar sensors.

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Section: Modeling For Re-engineered Terahertz Researchmentioning

confidence: 99%

Section: Modeling For Re-engineered Terahertz Researchmentioning

confidence: 99%

Emerging Transistor Technologies Capable of Terahertz Amplification: A Way to Re-Engineer Terahertz Radar Sensors

Božanić

Sinha

2019

Sensors

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“…To accurately predict the large signal performance of PAs, several large signal models have been reported in previous works. [6][7][8][9][10][11][12][13] Some proposed works based on I-V characteristic equations describe the static relationships of junction voltages and currents, [6][7][8][9] while others give out good consideration of circuit-level nonlinear parameters such us IP3, P1dB, or IM3. [10][11][12][13] These methods give circuit designer accurate simulation results, but limited insight of how the intrinsic elements change with increasing power level at large signal mode and its influence on nonlinear effects.…”

Section: Introductionmentioning

confidence: 99%

“…Consequently, a large signal model with the capacity to describe large signal intrinsic elements of the transistor quantitatively is critical to investigate and minimize the nonlinear distortion of PAs. To accurately predict the large signal performance of PAs, several large signal models have been reported in previous works . Some proposed works based on I‐V characteristic equations describe the static relationships of junction voltages and currents, while others give out good consideration of circuit‐level nonlinear parameters such us IP3, P1dB, or IM3 .…”

Section: Introductionmentioning

confidence: 99%

Analysis of nonlinear large signal intrinsic elements for InGaP/GaAs HBT based on Gummel‐Poon model

Shibata

et al. 2018

Int J Numerical Modelling

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A large signal analysis method based on Gummel-Poon model is proposed to predict nonlinear behavior of InGaP/GaAs HBT. A 2 × 20 μm 2 transistor is fabricated with InGaP/GaAs HBT technology. The large signal transconductance G m , conductance G be , and capacitance C BE , C BC are calculated based on the proposed method and measured using a RF testing probe. The calculated and measured results show good consistency up to nonlinear power level. The proposed method is applied to analyze variations of nonlinear large signal intrinsic elements of this transistor with increasing power under different bias conditions, in order to raise benefit of nonlinear consideration for power amplifiers.

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“…SiGe technology can still be preferred to other technologies dedicated to high-power applications, especially because of its good performances and low cost, making it a good choice for mass production markets [3]- [5]. The promising process developments of this technology are made possible because of the continuous support of technology computer-aided design (TCAD), compact modeling, and characterization activities [1], [6], [7].…”

Section: Introductionmentioning

confidence: 99%

Innovative SiGe HBT Topologies With Improved Electrothermal Behavior

D'Esposito

Fregonèse

Chakravorty

et al. 2016

IEEE Trans. Electron Devices

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This paper investigates alternative topologies of silicon germanium heterojunction bipolar transistors designed and fabricated in the state-of-the-art BiCMOS process from STMicroelectronics for improved safe-operating characteristics. Electrical and thermal behaviors of various structures are analyzed and compared, along with a detailed discussion on drawbacks and advantages. The test structures under study are different in terms of emitter-finger layouts as well as the metal stacks in the back-end-of-line. It is observed that the multifinger transistor structures having nonuniform finger lengths with wider area enclosed by the deep trench and higher metallization stacks yield an improved thermal behavior. Therefore, the safe-operating area of multifinger transistors can be extended without degrading the RF performances.Index Terms-Back-end-of-line (BEOL), deep trench, emitter layouts, multifinger transistors, safe-operating area (SOA), silicon germanium heterojunction bipolar transistors (SiGe HBTs), thermal resistance. 0018-9383

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SiGe HBT modeling for mm-wave circuit design

Cited by 17 publications

References 23 publications

Emerging Transistor Technologies Capable of Terahertz Amplification: A Way to Re-Engineer Terahertz Radar Sensors

Emerging Transistor Technologies Capable of Terahertz Amplification: A Way to Re-Engineer Terahertz Radar Sensors

Analysis of nonlinear large signal intrinsic elements for InGaP/GaAs HBT based on Gummel‐Poon model

Innovative SiGe HBT Topologies With Improved Electrothermal Behavior

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