2009
DOI: 10.1109/tcsii.2008.2010173
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SiGe Analog AGC Circuit for an 802.11a WLAN Direct Conversion Receiver

Abstract: This brief presents a baseband automatic gain control (AGC) circuit for an IEEE 802.11a wireless local area network (WLAN) direct conversion receiver. The whole receiver is to be fully integrated in a low-cost 0.25-µm 75-GHz SiGe bipolar complementary metal-oxide-semiconductor (BiCMOS) process; thus, the AGC has been implemented in this technology by employing newly designed cells, such as a linear variable gain amplifier (VGA) and a fast-settling peak detector. Due to the stringent settling-time constraints o… Show more

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Cited by 30 publications
(11 citation statements)
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“…Compared to the AGC introduced in [6] fabricated in 0.25 mm SiGe BiCMOS technology with an active area of 0.225 mm 2 the AGC in [6] has THD of 0.9% at the lowest gain and its low and high cutoff frequencies are 68 kHz -95 MHz. The presented BGL-AGC circuit has a 0.16 mm 2 area, measured cutoff frequencies of 0.6 kHz-112 MHz and THD is 0.5% at the lowest gain.…”
Section: Experimentmentioning
confidence: 99%
“…Compared to the AGC introduced in [6] fabricated in 0.25 mm SiGe BiCMOS technology with an active area of 0.225 mm 2 the AGC in [6] has THD of 0.9% at the lowest gain and its low and high cutoff frequencies are 68 kHz -95 MHz. The presented BGL-AGC circuit has a 0.16 mm 2 area, measured cutoff frequencies of 0.6 kHz-112 MHz and THD is 0.5% at the lowest gain.…”
Section: Experimentmentioning
confidence: 99%
“…In the same way as made for PD1, it is possible to design a fast-settling envelope detector based on the topology of PD3. This time, the new version, which is presented next, is part of the AGC proposed in [51], targeting specifically an IEEE 802.11a 5-GHz WLAN receiver application. It is implemented in SiGe technology in order to raise the range of study of this work.…”
Section: Proposed Pd3: High-g M Transconductor/current Mirror Based Pdmentioning
confidence: 99%
“…The small-signal input transconductance gm,in of the active (or slave) differential pair M"n-M"p, is given by (1) where the factor m is an integer number, VCM is the input common-mode (CM) voltage, Vs is the common-source voltage of M"n and M"p, K and VTH are the transconductance parameter and the threshold voltage of the NMOS devices. The other symbols have their usual meaning.…”
Section: Operation Principlementioning
confidence: 99%
“…Tunable transconductors are important building blocks employed in many analog circuit applications as in high frequency amplifiers [1], continuous-time filters [2,3] and variable gain amplifiers [4][5][6][7]. Transconductance adjustment is necessary for programming circuit/system parameters, like center frequency and quality factor of filters, for setting the voltage gain of amplifiers or for compensating the tolerances due to process and temperature variations [8][9][10].…”
Section: Introductionmentioning
confidence: 99%