SiGe alloys: growth, properties and applications

Arienzo, M.; Iyer, Subramanian S.; Meyerson, B.S.; Patton, G.L.; Stork, J.M.C.

doi:10.1016/0169-4332(91)90361-m

Cited by 26 publications

(9 citation statements)

References 46 publications

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“…Silicon−germanium (SiGe) alloy thin films have attracted significant interest in recent years due to the applications of SiGe in complementary metal-oxide-semiconductor (CMOS) technology, telecommunications, optoelectronics, and quantum effect devices. − Deposition of SiGe alloys is commonly achieved by chemical vapor deposition (CVD) or gas-source molecular beam epitaxy (GSMBE) with Si and Ge hydrides as gas-phase precursors. − Elementary surface processes during alloy deposition include adsorption of precursors, surface reaction, and desorption of byproducts. However, the detailed mechanisms and the kinetic parameters of the surface reactions, especially those on alloy surfaces, are mostly unknown.…”

Section: Introductionmentioning

confidence: 99%

Quantum Chemistry Based Statistical Mechanical Model of Hydrogen Desorption from Si(100)-2 × 1, Ge(100)-2 × 1, and SiGe Alloy Surfaces

2004

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A model for temperature programmed desorption (TPD) of hydrogen from the Si(100)-2 × 1, Ge(100)-2 × 1, and SiGe alloy surfaces is presented. In the model, density functional theory is used to calculate the activation barriers of hydrogen desorption, and statistical mechanics is applied to determine the distribution of hydride species on the Si(100)-2 × 1, Ge(100)-2 × 1, and SiGe alloy surfaces using the DFT results. Hydrogen desorption via both the prepairing mechanism and the interdimer mechanisms is considered. The overall rates of hydrogen desorption from the surfaces are determined by the statistical model, and TPD spectra are simulated from the overall desorption rates. We find that, although the TPD spectra simulated according to the prepairing mechanism are consistent with the near-first-order kinetics observed experimentally on the Si(100)-2 × 1 and Ge(100)-2 × 1 surfaces, hydrogen desorption via interdimer mechanisms results in peak temperatures more consistent with experiments. We also consider two kinetic models which combine the contributions from both mechanisms and find better agreement with experiments in terms of both desorption peak temperatures and reaction orders. Finally, we have modeled hydrogen desorption from SiGe alloy surfaces.

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Section: Introductionmentioning

confidence: 99%

Quantum Chemistry Based Statistical Mechanical Model of Hydrogen Desorption from Si(100)-2 × 1, Ge(100)-2 × 1, and SiGe Alloy Surfaces

2004

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“…1,2 In this letter we report on the possibility to grow SiGe thin films by the pulsed laser deposition ͑PLD͒ technique, 3 which represents a very promising alternative to the other well-established low-temperature methods such as the chemical vapor deposition ͑CVD͒, the molecular beam epitaxy ͑MBE͒, or the limited reaction processing ͑LRP͒ techniques. 4,5 In our experiments, we have used a pulsed excimer laser to irradiate a bulk ͑sintered͒ SiGe target under high vacuum conditions. Ablated species have been collected onto both crystalline silicon or amorphous fused silica substrates in order to allow thin-film growth.…”

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confidence: 99%

Pulsed excimer laser deposition of Si1−xGex thin films

Antoni

Fogarassy

Fuchs

et al. 1995

Applied Physics Letters

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“…1(b) shows the energy band diagram of a metal/p Si Ge junction. The energy-band gap (Eg) of Si Ge changes from 1.12 to 0.66 eV with increasing Ge mole fraction [9]. The conduction band edges are almost at the same level in metallurgical Si and SiGe junction.…”

Section: Resultsmentioning

confidence: 99%

Reduction of source/drain series resistance and its impact on device performance for PMOS transistors with raised Si/sub 1-x/Ge_x source/drain

Huang

Chen

Chang

et al. 2000

IEEE Electron Device Lett.

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P-channel MOS transistors with raised Si 1 Ge and Si source/drain (S/D) structure selectively grown by ultra high vacuum chemical vapor deposition (UHVCVD) were fabricated for the first time. The impacts of Si 1 Ge and Si epitaxial S/D layer on S/D series resistance and drain current of p-channel transistors were studied. Our result show that the new device with Si 1 Ge raised S/D layer depicts only half the value of the specific contact resistivity and S/D series resistance ( SD ), compared to the device with Si raised S/D layer. The improvement is even more dramatic, when comparing to the conventional device without any raised S/D layer, i.e., SD of the new device with Si 1 Ge raised S/D is only about one fourth the value of the conventional device. Moreover, the device with raised SiGe S/D structure produces a 29% improvement in transconductance ( ) at an effective channel length of 0.16 m. These performance improvements, together with several inherent advantages such as self-aligned selective epitaxial growth (SEG) nature and the resultant T-shaped gate structure, make the new device with raised Si 1 Ge S/D structure very attractive for future sub-0.1 m p-channel MOS transistors. Index Terms-RSD MOSFET, selective epitaxial growth, source and drain series resistance (( SD ), strained Si 1 Ge , ultra high vacuum chemical vapor deposition.

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SiGe alloys: growth, properties and applications

Cited by 26 publications

References 46 publications

Quantum Chemistry Based Statistical Mechanical Model of Hydrogen Desorption from Si(100)-2 × 1, Ge(100)-2 × 1, and SiGe Alloy Surfaces

Quantum Chemistry Based Statistical Mechanical Model of Hydrogen Desorption from Si(100)-2 × 1, Ge(100)-2 × 1, and SiGe Alloy Surfaces

Pulsed excimer laser deposition of Si1−xGex thin films

Reduction of source/drain series resistance and its impact on device performance for PMOS transistors with raised Si/sub 1-x/Ge_x source/drain

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SiGe alloys: growth, properties and applications

Cited by 26 publications

References 46 publications

Quantum Chemistry Based Statistical Mechanical Model of Hydrogen Desorption from Si(100)-2 × 1, Ge(100)-2 × 1, and SiGe Alloy Surfaces

Quantum Chemistry Based Statistical Mechanical Model of Hydrogen Desorption from Si(100)-2 × 1, Ge(100)-2 × 1, and SiGe Alloy Surfaces

Pulsed excimer laser deposition of Si1−xGex thin films

Reduction of source/drain series resistance and its impact on device performance for PMOS transistors with raised Si/sub 1-x/Gex source/drain

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Reduction of source/drain series resistance and its impact on device performance for PMOS transistors with raised Si/sub 1-x/Ge_x source/drain