SiC Trench MOSFET With Shielded Fin-Shaped Gate to Reduce Oxide Field and Switching Loss

Jiang, Huaping; Wei, Jin; Dai, Xiaoping; Ke, Maolong; Deviny, Ian; Mawby, P.A.

doi:10.1109/led.2016.2599921

Cited by 59 publications

(20 citation statements)

References 16 publications

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“…The reference current iref can be expressed as Equation (16), where iref_amp is the active power reference amplitude and iref_qamp is the reactive power reference amplitude. Because the inverter only outputs active power, iref_qamp = 0, and the equation can be simplified as Equation (17). Current iref_amp is the current reference amplitude, which is generated by the voltage loop.…”

Section: Second Order Generalized Integrator Software Phase Lock Loopmentioning

confidence: 99%

“…With the development of wide band-gap semiconductor technology, the SiC power devices, which are suitable for high frequency switching, are becoming mature. Contrast analyses have been done between the Si and SiC power devices in different applications [14][15][16][17]. The results show that the SiC device has lower losses in different implementations and the advantages are more obvious in high frequency applications.…”

Section: Introductionmentioning

confidence: 99%

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High Frequency Dual-Buck Full-Bridge Inverter Utilizing a Dual-Core MCU and Parallel Algorithm for Renewable Energy Applications

Meng¹,

Wang²,

Yang³

et al. 2017

Energies

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Abstract:A high frequency dual-buck full-bridge inverter for small power renewable energy applications is proposed in this paper. The implementation of the wide band gap SiC (Silicon Carbide) power device contributes to the high switching frequency of 400 kHz. This high frequency contributes to reduced converter volume as well as improved power density, which greatly strengthens its portability and application range. For the control strategy, a voltage-current dual loop controller is employed. A three-pole-three-zero (3P3Z) compensator is applied in the current loop in order to track the current reference without static error. A voltage loop two-pole two-zero (2P2Z) compensator is used to generate the current reference for stabilizing the DC bus voltage. Not only is the inner current loop analyzed in detail, which includes the modeling of the equivalent inductor-capacitor-inductor (LCL)-type inverter and the design of the 3P3Z compensator, but also the outer voltage loop is discussed, the model of which is established based on the energy balance. Furthermore, a feedback linearization method is adopted to simplify the duty cycle calculation and helps to accelerate the control speed. A second-order generalized integrator software phase lock loop (SOGI-SPLL) is employed to obtain the phase angle and to synchronize the inverter output current with the grid voltage. A parallel structure algorithm is conducted based on a dual-core microcontroller unit (MCU) for the first time to control the high frequency inverter. This approach avoids the contradiction between the high frequency operation and the limited computing capacity of the conventional single-core MCUs. The software structure, time-consuming distribution, and interactive communication method are analyzed in detailed. Finally, this paper verifies the feasibility of the theoretical analyses through simulation and experiments based on a 1 kW prototype.

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Section: Second Order Generalized Integrator Software Phase Lock Loopmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

High Frequency Dual-Buck Full-Bridge Inverter Utilizing a Dual-Core MCU and Parallel Algorithm for Renewable Energy Applications

Meng¹,

Wang²,

Yang³

et al. 2017

Energies

View full text Add to dashboard Cite

show abstract

“…To address this problem, a structure which includes a gate trench bottom P+ shielding region (BPR) has been proposed [12][13][14][15]. Various other structures have been proposed additionally to reduce the electric field of the gate oxide [16][17][18][19]. Infineon's CoolSiC and Rohm's Double Trench structure were also commercialized at a 1.2 kV class [20][21][22].…”

Section: Introductionmentioning

confidence: 99%

Numerical Simulation Analysis of Switching Characteristics in the Source-Trench MOSFET’s

Cheon

Kim

2020

Electronics

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In this paper, we compare the static and switching characteristics of the 4H-SiC conventional UMOSFET (C-UMOSFET), double trench MOSFET (DT-MOSFET) and source trench MOSFET (ST-MOSFET) through TCAD simulation. In particular, the effect of the trenched source region and the gate trench bottom P+ shielding region on the capacitance is analyzed, and the dynamic characteristics of the three structures are compared. The input capacitance is almost identical in all three structures. On the other hand, the reverse transfer capacitance of DT-MOSFET and ST-MOSFET is reduced by 44% and 24%, respectively, compared to C-UMOSFET. Since the reverse transfer capacitance of DT-MOSFET and ST-MOSFET is superior to that of C-UMOSFET, it improves high frequency figure of merit (HF-FOM: RON-SP × QGD). The HF-FOM of DT-MOSFET and ST-MOSFET is 289 mΩ∙nC, 224 mΩ∙nC, respectively, which is improved by 26% and 42% compared to C-UMOSFET. The switching speed of DT-MOSFET and ST-MOSFET are maintained at the same level as the C-UMOSFET. The switching energy loss and power loss of the DT-MOSFET and ST-MOSFET are slightly improved compared to C-UMOSFET.

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“…Power devices typically feature p-grids inside the device active regions to block the high off-state voltage or to protect certain vulnerable structures [1]. With the key challenges, such as low channel resistance [2], channel mobility [3,4], and oxide reliability [5] being addressed, silicon carbide (SiC) devices are now commercially available from several vendors [6,7]. The SiC devices are widely used in power electronics-for example, SiC transistors adopted as switches in inverter circuit, SiC diodes used in rectifier circuit and as a freewheeling diode in inverter circuit.…”

Section: Introductionmentioning

confidence: 99%

Investigation of Electrical Contacts to p-Grid in SiC Power Devices Based on Charge Storage Effect and Dynamic Degradation

Hua

Wei

2020

Electronics

Self Cite

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P-grid is a typical feature in power devices to block high off-state voltage. In power devices, the p-grid is routinely coupled to an external electrode with an Ohmic contact, but Schottky contact to the p-grid is also proposed/adopted for certain purposes. This work investigates the role of contact to p-grid in power devices based on the commonly adopted technology computer-aided design (TCAD) device simulations, with the silicon carbide (SiC) junction barrier Schottky (JBS) diode as a case study. The static characteristics of the JBS diode is independent of the nature of the contact to p-grid, including the forward voltage drop (VF) and the breakdown voltage (BV). However, during the switching process, a Schottky contact would cause storage of negative charges in the p-grid, which leads to an increased VF during switching operation. On the contrary, an Ohmic contact provides an effective discharging path for the stored negative charges in the p-grid, which eliminates the dynamic degradation issues. Therefore, the necessity of an Ohmic contact to p-grid in power devices is clarified.

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SiC Trench MOSFET With Shielded Fin-Shaped Gate to Reduce Oxide Field and Switching Loss

Cited by 59 publications

References 16 publications

High Frequency Dual-Buck Full-Bridge Inverter Utilizing a Dual-Core MCU and Parallel Algorithm for Renewable Energy Applications

High Frequency Dual-Buck Full-Bridge Inverter Utilizing a Dual-Core MCU and Parallel Algorithm for Renewable Energy Applications

Numerical Simulation Analysis of Switching Characteristics in the Source-Trench MOSFET’s

Investigation of Electrical Contacts to p-Grid in SiC Power Devices Based on Charge Storage Effect and Dynamic Degradation

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