SiC power-switching devices-the second electronics revolution?

Cooper, James A.; Agarwal, Anant

doi:10.1109/jproc.2002.1021561

Cited by 334 publications

(167 citation statements)

References 34 publications

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“…SiC offers significant advantages for high-power-switching devices. 1 Doped diamond is a superior wide-band-gap semiconductor, offering a high breakdown voltage, high thermal conductivity, small dielectric constant, and excellent radiation hardness. 2 Carbon nanotubes ͑CNTs͒ are quasi-one-dimensional molecular structures with semiconducting or metallic properties, which are widely investigated for application in the field of nanoelectronics.…”

Section: Introductionmentioning

confidence: 99%

Solid-state formation of titanium carbide and molybdenum carbide as contacts for carbon-containing semiconductors

Leroy

Detavernier

Meirhaeghe

et al. 2006

Journal of Applied Physics

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Metal carbides are good candidates to contact carbon-based semiconductors ͑SiC, diamond, and carbon nanotubes͒. Here, we report on an in situ study of carbide formation during the solid-state reaction between thin Ti or Mo films and C substrates. Titanium carbide ͑TiC͒ was previously reported as a contact material to diamond and carbon nanotubes. However, the present study shows two disadvantages for the solid-state reaction of Ti and C. First, because Ti reacts readily with oxygen, a capping layer should be included to enable carbide formation. Second, the TiC phase can exist over a wide range of composition ͑about 10%, i.e., from Ti 0.5 C 0.5 to Ti 0.6 C 0.4 ͒, leading to significant variations in the properties of the material formed. The study of the Mo-C system suggests that molybdenum carbide ͑Mo 2 C͒ is a promising alternative, since the phase shows a lower resistivity ͑about 45% lower than for TiC͒, the carbide forms below 900°C, and its formation is less sensitive to oxidation as compared with the Ti-C system. The measured resistivity for Mo 2 C is =59 ⍀ cm, and from kinetic studies an activation energy for Mo 2 C formation of E a = 3.15± 0.15 eV was obtained.

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Section: Introductionmentioning

confidence: 99%

Solid-state formation of titanium carbide and molybdenum carbide as contacts for carbon-containing semiconductors

Leroy

Detavernier

Meirhaeghe

et al. 2006

Journal of Applied Physics

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“…Power MOSFETs based on wide band-gap semiconductors such as SiC [4] are important types of power electronics that are gaining momentum in both research and commercial arenas. One of the benefits of using wide band-gap semiconductors in power MOS devices is that the devices can in principle operate at higher temperature than their Si-based counterparts, reducing complex and expensive cooling requirements.…”

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confidence: 99%

Atomic origin of high-temperature electron trapping in metal-oxide-semiconductor devices

Shen

Dhar

Pantelides

2015

Applied Physics Letters

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MOSFETs based on wide band-gap semiconductors are suitable for operations at high temperature, at which additional atomic-scale processes that are benign at lower temperatures can get activated which results in device degradation. Recently significant enhancement of electron trapping was observed under positive bias in SiC MOSFETs at temperatures higher than 150°C. Here we report first-principle calculations showing that the enhanced electron trapping is associated with thermally activated capturing of a second electron by an oxygen vacancy in SiO 2 , by which the vacancy transforms into a new structure that comprises one Si dangling bond and a bond between a five-fold and a four-fold Si atoms. The results suggest a key role of oxygen vacancies and their structural reconfigurations in the reliability of high-temperature MOS devices.

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“…The promise of SiC power devices stems from its superior physical properties and rapid progress in growth and device technologies [1][2][3][4][5]. SiC (4H polytype) unipolar devices such as metal-oxide-semiconductor field effect transistors (MOSFETs) and Schottky barrier diodes (SBDs) with blocking voltages of 600-1700 V have been commercialized, demonstrating substantial reduction of power loss in various power conversion systems.…”

Section: Introductionmentioning

confidence: 99%

Promise and Challenges of High-Voltage SiC Bipolar Power Devices

et al. 2016

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Although various silicon carbide (SiC) power devices with very high blocking voltages over 10 kV have been demonstrated, basic issues associated with the device operation are still not well understood. In this paper, the promise and limitations of high-voltage SiC bipolar devices are presented, taking account of the injection-level dependence of carrier lifetimes. It is shown that the major limitation of SiC bipolar devices originates from band-to-band recombination, which becomes significant at a high-injection level. A trial of unipolar/bipolar hybrid operation to reduce power loss is introduced, and an 11 kV SiC hybrid (merged pin-Schottky) diodes is experimentally demonstrated. The fabricated diodes with an epitaxial anode exhibit much better forward characteristics than diodes with an implanted anode. The temperature dependence of forward characteristics is discussed.

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SiC power-switching devices-the second electronics revolution?

Cited by 334 publications

References 34 publications

Solid-state formation of titanium carbide and molybdenum carbide as contacts for carbon-containing semiconductors

Solid-state formation of titanium carbide and molybdenum carbide as contacts for carbon-containing semiconductors

Atomic origin of high-temperature electron trapping in metal-oxide-semiconductor devices

Promise and Challenges of High-Voltage SiC Bipolar Power Devices

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