Atomic origin of high-temperature electron trapping in metal-oxide-semiconductor devices

Shen, Xiao; Dhar, Sarit; Pantelides, Sokrates T.

doi:10.1063/1.4917528

Cited by 21 publications

(15 citation statements)

References 29 publications

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“…A single kpoint at (1/4, 1/4, 1/4) was used for Brillouin zone sampling during ionic relaxation. 41 Among the candidate defects that were studied, the transition energies associated with the optical levels of In (In i , Cu In , and V In ) agree best with experimental data, E exp = 1.31 eV (950 nm). 42 None of the other candidate defects have transition energies within 0.3 eV of the experimental value (Figure S13).…”

Section: ■ Results and Discussionsupporting

confidence: 55%

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Defect Luminescence from Wurtzite CuInS₂ Nanocrystals: Combined Experimental and Theoretical Analysis

Leach¹,

Shen

Faust³

et al. 2016

J. Phys. Chem. C

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CuInS2 nanocrystals with the wurtzite structure show promise for applications requiring efficient energy transport due to their anisotropic crystal structure. We investigate the source of photoluminescence in the near-infrared spectral region recently observed from these nanocrystals. Spectroscopic studies of both wurtzite CuInS2 itself and samples alloyed with Cd or Zn allow the assignment of this emission to a radiative point defect within the nanocrystal structure. Further, by varying the organic passivation layer on the material, we are able to determine that the atomic species responsible for nonradiative decay paths on the nanocrystal surface are Cu- or S-based. Density functional theory calculations of defect states within the material allow identification of the likely radiative species. Understanding both the electronic structure and optical properties of wurtzite CuInS2 nanocrystals is necessary for their efficient integration into potential biological, photovoltaic, and photocatalytic applications.

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Section: ■ Results and Discussionsupporting

confidence: 55%

“…The ionic relaxations are converged to 10 –3 eV for the total energy difference between two steps. A single k-point at (1/4, 1/4, 1/4) was used for Brillouin zone sampling during ionic relaxation …”

Section: Resultsmentioning

confidence: 99%

Defect Luminescence from Wurtzite CuInS₂ Nanocrystals: Combined Experimental and Theoretical Analysis

Leach¹,

Shen

Faust³

et al. 2016

J. Phys. Chem. C

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“…This gives the oxygen vacancy the possibility to be extrinsically negatively charged. Moreover, a recent study showed that negatively charged oxygen vacancies in SiO 2 can explain enhanced electron trapping observed in SiC MOSFETs [41]. The defect charging process is described and linked to actual functioning temperature of the device.…”

Section: 𝜀(+𝑞mentioning

confidence: 98%

First principles study of band line up at defective metal-oxide interface: oxygen point defects at Al/SiO₂interface

Tea¹,

Huang²,

Hin³

2016

J. Phys. D: Appl. Phys.

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The dielectric breakdown at metal-oxide interfaces is a critical electronic device failure mechanism. Electronic tunneling through dielectric layers is a well-accepted explanation for this phenomenon. Theoretical band alignment studies, providing information about tunneling, have already been conducted in the literature for metal-oxide interfaces. However, most of the time materials were assumed defect free. Oxygen vacancies being very common in oxides, their effect on band lineup is of prime importance in understanding electron tunneling in realistic materials and devices. This work explores the effect of oxygen vacancy and oxygen di-vacancy at the Al/SiO 2 interface on the band line up within Density Functional Theory using PBE0 hybrid exchange and correlation functional. It is found that the presence of defects at the interface, and their charge state, strongly alters the band line up.

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“…These films are mainly deposited by plasma‐enhanced chemical vapor deposition (PECVD), atomic layer deposition, or sputtering. Although SiO 2 is a good gate insulator in terms of its band offset, the PECVD process introduces many defects in the SiO 2 film, such as oxygen vacancies and hydrogen‐related bonds . The charge traps formed by these defects shift the threshold voltage, reducing the reliability of the device.…”

Section: Introductionmentioning

confidence: 99%

The Influence of Ga–OH Bond at Initial GaN Surface on the Electrical Characteristics of SiO₂/GaN Interface

Uenuma

Ando

Furukawa

et al. 2019

Physica Status Solidi (b)

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Herein, the influence of the Ga-OH bond at the GaN surface on the electrical characteristics of the SiO 2 /GaN metal-oxide semiconductor structure is investigated. The GaN surface is modified by three different surface treatments (O 2 annealing, wet annealing, and ultraviolet [UV]/O 3 treatment). The Ga-OH bond is evaluated by X-ray photoelectron spectroscopy and characterized by capacitance-voltage (CV) measurements and a positive bias stress test. Increasing the ratio of Ga-OH bonds at the SiO 2 /GaN interface decreases the net fixed charge at the SiO 2 /GaN interface in the CV measurements and increases the voltage shift in the stress test. Therefore, the Ga-OH bond at the SiO 2 /GaN interface develops a negative charge and behaves as an electron trap. The undesirable influence of the Ga-OH-related traps is reduced by low-temperature annealing.

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Atomic origin of high-temperature electron trapping in metal-oxide-semiconductor devices

Cited by 21 publications

References 29 publications

Defect Luminescence from Wurtzite CuInS₂ Nanocrystals: Combined Experimental and Theoretical Analysis

Defect Luminescence from Wurtzite CuInS₂ Nanocrystals: Combined Experimental and Theoretical Analysis

First principles study of band line up at defective metal-oxide interface: oxygen point defects at Al/SiO₂interface

The Influence of Ga–OH Bond at Initial GaN Surface on the Electrical Characteristics of SiO₂/GaN Interface

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Atomic origin of high-temperature electron trapping in metal-oxide-semiconductor devices

Cited by 21 publications

References 29 publications

Defect Luminescence from Wurtzite CuInS2 Nanocrystals: Combined Experimental and Theoretical Analysis

Defect Luminescence from Wurtzite CuInS2 Nanocrystals: Combined Experimental and Theoretical Analysis

First principles study of band line up at defective metal-oxide interface: oxygen point defects at Al/SiO2interface

The Influence of Ga–OH Bond at Initial GaN Surface on the Electrical Characteristics of SiO2/GaN Interface

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Defect Luminescence from Wurtzite CuInS₂ Nanocrystals: Combined Experimental and Theoretical Analysis

Defect Luminescence from Wurtzite CuInS₂ Nanocrystals: Combined Experimental and Theoretical Analysis

First principles study of band line up at defective metal-oxide interface: oxygen point defects at Al/SiO₂interface

The Influence of Ga–OH Bond at Initial GaN Surface on the Electrical Characteristics of SiO₂/GaN Interface