SiC Migration Enhanced Embedded Epitaxial (ME³) Growth Technology

Epitaxial Growth of Silicon Carbide

“…Examples of such structures include the channel regions of vertical static induction transistors (or junction field effect transistors) [206,207] and of lateral metal-semiconductor field effect transistors [208]. Reports of homoepitaxial growth of SiC on trench structures have been published [209][210][211]. When a trench is formed on off-axis SiC(0001), homoepitaxial growth takes place from the trench bottom, as well as from the trench sidewalls.…”

“…Selective embedded epitaxy by using carbon [213] or TaC [214] as masking materials has also been reported. Figure 4.39 shows a cross-sectional TEM image of SiC trenches filled by embedded epitaxy [211]. When the CVD growth was carried out with a standard C/Si ratio (C∕Si = 1.5) at a growth temperature of 1550 ∘ C, the epitaxial layer near the top of a trench became thicker, leading to formation of a void inside the trench (not shown).…”