SiC epitaxial growth on porous SiC substrates

Melnychuck, Galyna; Mynbaeva, M. G.; Rendakova, S.; Dmitriev, V.; Saddow, Stephen E.

doi:10.1557/proc-622-t4.2.1

Cited by 10 publications

(9 citation statements)

References 3 publications

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“…[1][2][3][4][5][6] Such porous materials are produced by anodizing n-type SiC in hydrofluoric acid under ultraviolet illumination. [1][2][3][4][5][6] Such porous materials are produced by anodizing n-type SiC in hydrofluoric acid under ultraviolet illumination.…”

Section: Introductionmentioning

confidence: 99%

Growth of GaN on porous SiC and GaN substrates

Inoki

Kuan

Lee

et al. 2003

Journal of Elec Materi

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GaN films were grown on porous SiC and GaN templates using both plasma-assisted molecular beam epitaxy (PAMBE) and metal-organic chemical vapor deposition (MOCVD) to evaluate possible advantage of epitaxy on a porous substrate. For the growth of GaN on porous SiC by PAMBE, transmission electron microscopy (TEM) observations indicate that the exposed SiC suface pores tend to extend into the GaN film as open tubes and to trap Ga droplets. The GaN layers grown on porous templates have fewer threading dislocations originating at the interface, but they have additional defects in the form of half-loop dislocations which act to relieve the strain in the films. For PAMBE of GaN on porous GaN, dislocations existing in the porous seed layer are seen to propagate through the porous layer into the overgrown GaN, resulting in no dislocation reduction. For MOCVD of GaN on porous GaN, the initial regrowth tend to bend laterally the dislocations and enhance their annihilation, resulting in 5-10× fewer dislocations in the overgrown film.

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Section: Introductionmentioning

confidence: 99%

Growth of GaN on porous SiC and GaN substrates

Inoki

Kuan

Lee

et al. 2003

Journal of Elec Materi

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“…There has been considerable interest in recent years in using porous (ps) SiC as a substrate to grow epitaxial SiC and GaN with reduced dislocation density [1][2][3][4][5][6]. Porous SiC is prepared by anodizing n-type SiC in hydrofluoric acid (HF) under ultra-violet illumination [7].…”

Section: Introductionmentioning

confidence: 99%

Plasma-assisted molecular beam epitaxy of GaN on porous SiC substrates with varying porosity

Sagar¹,

Lee²,

Feenstra³

et al. 2003

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Abstract:We have grown GaN on porous SiC substrates and studied the effect of substrate porosity on the overgrown film quality in terms of defect structure and density and film strain. The growth was performed by plasma-assisted molecular beam epitaxy (PAMBE). The GaN films were characterized by x-ray, transmission electron microscopy (TEM) and wafer curvature measurements by surface profilometry. TEM images show that the GaN film grown on porous substrates contains open tubes and a low dislocation density in regions between tubes. We discuss various growth mechanisms that can lead to these defect features in the GaN film. However, we do not find any overall improvement in the x-ray rocking curve FWHM of the GaN films grown on porous substrates compared to those on nonporous substrates. It was found that the GaN films grown on porous SiC were significantly more strain relaxed compared to those grown on nonporous substrate. We propose various mechanisms that can lead to the reduction in strain in GaN films grown on porous substrates and compare the data with finite element analysis (FEA) simulations of such a system.

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“…13 There was no intentional HCl or H 2 etching of the sample prior to initiation of the growth. The RF generator is switched on with H 2 carrier gas and propane precursor gas flow.…”

Section: Cvd Growthmentioning

confidence: 99%