SiC Double-Trench MOSFETs With Embedded MOS-Channel Diode

Zhou, Xintian; Pang, Haoyang; Jia, Yunpeng; Hu, Dongqing; Wu, Yu; Tang, Yun; Xia, Tian; Gong, Hao; Zhao, Yuanfu

doi:10.1109/ted.2019.2961367

Cited by 36 publications

(17 citation statements)

References 19 publications

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“…This is even far lower than that of the MOS-channel diode which was proposed by the already published literatures. [18][19][20] The corresponding current density distribution at this moment is illustrated in Fig. 14.…”

Section: Device Structures and Characteristicsmentioning

confidence: 99%

“…[10][11][12][13][14][15][16][17] The forward voltage drop (V F ) is greatly influenced by the barrier height formed between the metal and semiconductor. Another option is to split the poly gate, and one half of the cells are acted as an inversion-channel MOSchannel diode [18][19][20] or the accumulation-channel one. 21) In addition, it is also an effective measure to handle this problem by introducing a heterojunction diode (HD) into the SiC MOSFET.…”

Section: Introductionmentioning

confidence: 99%

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Numerical demonstration of SiC trench MOSFET with integrated heterojunction diode for enhanced performance

Wang

Jia

Zhou

et al. 2023

Jpn. J. Appl. Phys.

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In this paper, a novel SiC trench-gate MOSFET with integrated heterojunction diode (HD-TG-MOS) is proposed and studied according to TCAD simulations. The n-type polysilicon/n–type SiC HD is introduced into the groove by the direct contact between the polysilicon and semiconductor. As a result, significant improvements of device performance in the first and third quadrants are observed as compared to the conventional SiC trench-gate MOSFET (C-TG-MOS). Better yet, aided by the extremely low barrier height across the heterojunction, the knee voltage reduces to only 0.5 V with comparison of that of ~2.7 V for the body diode, when used for reverse freewheeling. These promotions make SiC HD-TG-MOS more advantageous for high-frequency power conversion applications. In addition, another cell architecture variant adopting a similar concept is presented, and the according process implementation is addressed as well from viewpoint of manufacture.

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Section: Device Structures and Characteristicsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Numerical demonstration of SiC trench MOSFET with integrated heterojunction diode for enhanced performance

Wang

Jia

Zhou

et al. 2023

Jpn. J. Appl. Phys.

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“…Another solution is integrating Schottky diode but it causes larger degradations of IDS, integration level, and high temperature characteristics [14][15][16][17][18][19]. Recently, a novel technology for power MOSFET with built-in channel diode (BCD) has been proposed to solve such a problem [20][21][22][23]. O. Häberlen and his team proposed a conventional SGT MOS with BCD (CBCD-SGT) which is arranged one BCD and three normal cells alternately, as shown in Fig.…”

Section: Introductionmentioning

confidence: 99%

A Novel Split-Gate-Trench MOSFET Integrated With Normal Gate and Built-In Channel Diode

Li¹,

Jia

Zhou

et al. 2021

IEEE J. Electron Devices Soc.

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“…The oxide thickness of the MCD is reduced in order to achieve a desired turn-on voltage (V F ), so as to suppress the minority carrier injection from the PIN diode. In addition, some studies adopting the MCD concept in SiC MOSFETs have been conducted [19,20]. However, the thinned oxide layer of MCD increases the maximum oxide electric field (E MOX ) to nearly 4 MV/cm, which may result in oxide breakdown or shorten the lifespan of SiC MOSFETs.…”

Section: Introductionmentioning

confidence: 99%

A Novel MOS-Channel Diode Embedded in a SiC Superjunction MOSFET for Enhanced Switching Performance and Superior Short Circuit Ruggedness

Yoon

Kim

2021

Electronics

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In this study, a novel MOS-channel diode embedded in a SiC superjunction MOSFET (MCD SJ-MOSFET) is proposed and analyzed by means of numerical TCAD simulations. Owing to the electric field shielding effect of the P+ body and the P-pillar, the channel diode oxide thickness (tco) of MCD can be set to very thin while achieving a low maximum oxide electric field (EMOX) under 3 MV/cm. Therefore, the turn-on voltage (VF) of the proposed structure was 1.43 V, deactivating the parasitic PIN body diode. Compared with the SJ-MOSFET, the reverse recovery time (trr) and the reverse recovery charge (Qrr) were improved by 43% and 59%, respectively. Although there is a slight increase in specific on-resistance (RON), the MCD SJ-MOSFET shows very low input capacitance (CISS) and gate to drain capacitance (CGD) due to the reduced active gate. Therefore, significantly improved figures of merit RON × CGD by a factor of 4.3 are achieved compared to SJ-MOSFET. As a result, the proposed structure reduced the switching time as well as the switching energy loss (ESW). Moreover, electro-thermal simulation results show that the MCD SJ-MOSFET has a short circuit withstand time (tSC) more than twice that of the SJ-MOSFET at various DC bus voltages (400 and 600 V).

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SiC Double-Trench MOSFETs With Embedded MOS-Channel Diode

Cited by 36 publications

References 19 publications

Numerical demonstration of SiC trench MOSFET with integrated heterojunction diode for enhanced performance

Numerical demonstration of SiC trench MOSFET with integrated heterojunction diode for enhanced performance

A Novel Split-Gate-Trench MOSFET Integrated With Normal Gate and Built-In Channel Diode

A Novel MOS-Channel Diode Embedded in a SiC Superjunction MOSFET for Enhanced Switching Performance and Superior Short Circuit Ruggedness

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