SiC detectors for evaluation of laser–plasma dynamics employing gas-puff targets

Torrisi, A.; Wachulak, P.; Fiedorowicz, Henryk; Torrisi, L.

doi:10.1016/j.nima.2018.12.086

Cited by 5 publications

(4 citation statements)

References 39 publications

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“…The first study was performed to investigate the time evolution of the plasma generated from the laser-gas interaction as a function of different gas-puff pressures. Figure 4 shows the spectra acquired using Ar gas-puff with Si and SiC detectors, for a single laser pulse [19]. The comparison is given normalizing to the solid angle of detection, i.e.…”

Section: Plasma Evolution Vs Timementioning

confidence: 99%

“…The detectors were tested also to investigate the plasma photon emission, taking into account the signal yield (integrated areas in terms of V × ns, for the different used filters) as a function of the Ar gas-puff pressure [19]. The experimental data show that using the HS1-Si detector the photon yields grow proportionally to the gas pressure, up to generate a saturation region at about 10 bar, due to the high density of e-h pairs generated in the active region.…”

Section: Plasma Evolution Vs Pressurementioning

confidence: 99%

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Characterization of Si and SiC detectors for laser-generated plasma monitoring in short wavelength range

Torrisi

Wachulak²,

Fiedorowicz

et al. 2020

J. Inst.

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A: Silicon carbide detectors were employed to characterize the plasma produced by laser interaction with a double stream gas-puff target source. A 10 Hz repetition rate Nd:YAG laser (1064 nm wavelength, 0.69 J pulse energy and 3 ns pulse duration) was employed to irradiate different gas-puff targets (Argon, Xenon and Sulfur hexafluoride), at different pressures (1-10 bar), emitting plasma radiation in different wavelength ranges (ultraviolet, extreme ultraviolet and soft X-rays). The emission produced by the laser radiation was properly filtered (employing Titanium, Aluminium, Zirconium and Calcium fluoride filters), to narrow down the broad-band emission of the generated plasma. The SiC detectors' signals were compared with a calibrated traditional silicon detector evaluating their differences, i.e. taking into account the plasma stability, the time trace profile and the characteristics of the gas-puff target source. The obtained results, which will be presented and discussed, allow to improve the geometry and configuration of the SiC detectors avoiding saturation and charge recombination effects and getting a better proportionality to the energy and fluence of the detected radiations. K: Detectors for UV, visible and IR photons; Plasma generation (laser-produced, RF, x ray-produced); Radiation monitoring; X-ray detectors 1Corresponding author.

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Section: Plasma Evolution Vs Timementioning

confidence: 99%

Section: Plasma Evolution Vs Pressurementioning

confidence: 99%

Characterization of Si and SiC detectors for laser-generated plasma monitoring in short wavelength range

Torrisi

Wachulak²,

Fiedorowicz

et al. 2020

J. Inst.

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“…The uniform metallic surface collection and the higher electron and hole mobilities in Si with respect to SiC allows us to collect very well the high charge densities produced by high photon fluences without nonlinearity and saturation effects. Further studies are in progress, in order to characterize other semiconductor detectors (in particular, GaS and diamond) using the plasma from different gas-puff targets [18].…”

Section: Discussionmentioning

confidence: 99%

“…In this work, plasma generated by a gas-puff target source, in the range of SXR, extreme ultraviolet (EUV) (λ ¼ 10-120 nm), and UV (λ ¼ 120-400 nm) radiation [17], was investigated, comparing the behavior of a Si and a SiC detector and applying spectral filters to select radiation from different wavelength ranges. As already performed with other gas-puff targets [18], Xe gas has been employed to change the emission from the plasma source, in order to compare such detectors in terms of their linearity response, time evolution, and signal intensity.…”

Section: Introductionmentioning

confidence: 99%

Monitoring of the plasma generated by a gas-puff target source

Torrisi¹,

Wachulak

Fiedorowicz

et al. 2019

Phys. Rev. Accel. Beams

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A 10-Hz repetition rate, Nd:YAG pulsed laser (λ ¼ 1064 nm, pulse energy of 0.69 J, pulse duration of 3 ns) irradiated a Xe double-stream gas-puff target source. The interaction gives rise to the formation of plasma and emission of soft x-ray and extreme ultraviolet radiation. The produced plasma was investigated and characterized by a silicon carbide (SiC) and a commercial silicon (Si) detector, applying different spectral filters. Some parameters such as the plasma stability and its evolution (time trace profile and pulse time duration) are presented and discussed, evidencing pros and cons of the employment of SiC detectors with respect to the traditional Si for laser-generated plasma diagnostic.

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Laser‐generated ns plasma pulses characterized using SiC Schottky diode

Torrisi

Cutroneo

2020

Contributions to Plasma Physics

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The nonequilibrium plasma generated by nanosecond laser pulse is characterized using a SiC detector connected in time‐of‐flight configuration to measure the radiations emitted from the plasma. Different metallic targets were irradiated by the pulsed laser at an intensity of 1010 W/cm2 and 200 mJ pulse energy. The SiC allows detecting ultraviolet radiations and soft X‐rays, electrons, and ions. The obtained plasma has a temperature of the order of tens to hundreds eV depending on the atomic number of the irradiated target and ion accelerations of the order of 100 eV per charge state.

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SiC detectors for evaluation of laser–plasma dynamics employing gas-puff targets

Cited by 5 publications

References 39 publications

Characterization of Si and SiC detectors for laser-generated plasma monitoring in short wavelength range

Characterization of Si and SiC detectors for laser-generated plasma monitoring in short wavelength range

Monitoring of the plasma generated by a gas-puff target source

Laser‐generated ns plasma pulses characterized using SiC Schottky diode

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