2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) 2016
DOI: 10.1109/wipda.2016.7799942
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SiC-CMOS digital circuits for high temperature power conversion

M. Barlow
1
,
A. Matthew Francis
2
,
N. Chiolino
3
et al.
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Cited by 11 publications
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References 13 publications
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An Improved Proportional Base Driver for Minimizing Driver Power Consumption of SiC BJT Over Wide Current and Temperature Range

Liang
1
,
Wang
2
,
Deng
3
et al. 2019
IEEE J. Emerg. Sel. Topics Power Electron.
5
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An Improved Proportional Base Driver for Minimizing Driver Power Consumption of SiC BJT Over Wide Current and Temperature Range

Liang
1
,
Wang
2
,
Deng
3
et al. 2019
IEEE J. Emerg. Sel. Topics Power Electron.
5
0
2
0
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Monolithic Integration of SiC Power BJT and Small-Signal BJTs for Power ICs

Liang
1
,
Wang
2
,
Deng
3
et al. 2020
IEEE J. Emerg. Sel. Topics Power Electron.
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6
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High-Temperature Analysis of GaN-Based MQW Photodetector for Optical Galvanic Isolations in High-Density Integrated Power Modules

Madhusoodhanan
1
,
Sabbar
2
,
Tran
3
et al. 2021
IEEE J. Emerg. Sel. Topics Power Electron.
12
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