SiC and GaN Devices With Cryogenic Cooling

Chen, Ruirui; Wang, Fei Fred

doi:10.1109/ojpel.2021.3075061

Cited by 46 publications

(12 citation statements)

References 47 publications

(57 reference statements)

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“…SiC MOSFET can be considered when the system required temperature is not very low. For example, the SiC MOSFET is designed to operate at 257 K in [18]; 3) for GaN HEMT, the reduction of threshold volatge and increased switching speed make it more vulnerable to circuit noises, which reduces the system reliability. Moreover, due to the power limitation of current commercial GaN HEMTs, paralleling operation of several GaN HEMTs is required, which brings more challenge for the application.…”

Section: Typical Experimental Waveforms and Discussionmentioning

confidence: 99%

“…[1,2]. The research in this area can be classified into the following three groups: 1) cryogenic characterizations of semiconductors [3]- [10]; 2) cryogenic characterizations of passive components [11]- [13]; 3) cryogenic design and evaluation of power converters [14]- [18]. In this article, the focus is on the characterizations of semiconductors.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Cryogenic Performances Comparisons Among Si MOSFET, SiC MOSFET, Cascode GaN, and GaN Devices

Wei

Hossain

Mantooth

2022

IOP Conf. Ser.: Mater. Sci. Eng.

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Cryogenic power electronics is an emerging technology to achieve high efficiency and high power density. As the key element of the power electronics system, the device performance should be evaluated under cryogenic temperatures. To demonstrate the differences between different materials and technologies, cryogenic temperature performance comparisons among silicon (Si) metal–oxide–semiconductor field-effect transistor (MOSFET), Si insulated-gate bipolar transistor (IGBT), silicon carbide (SiC) MOSFET, Cascode gallium nitride (GaN), and GaN high-electron-mobility transistor (HEMT) from different perspectives are made, which includes on-state resistance, threshold voltage, turn-on and turn-off times, turn-on and turn-off switching losses. The normalized values are adopted and results are drawn in the same pictures to demonstrate the differences. The results demonstrate that traditional Si devices have better performances under low temperatures. The SiC MOSFET is not suitable for cryogenic applications due to its increased on-state resistance and switching loss. Cascode GaN and GaN HEMT are promising candidates for cryogenic applications with reduced conduction loss and switching loss.

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Section: Typical Experimental Waveforms and Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Cryogenic Performances Comparisons Among Si MOSFET, SiC MOSFET, Cascode GaN, and GaN Devices

Wei

Hossain

Mantooth

2022

IOP Conf. Ser.: Mater. Sci. Eng.

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“…Moreover, the operation of Gallium Nitride (GaN) power devices has been demonstrated over a temperature range from 400 K and down to 4.2 K, allowing high operational flexibility [25]. GaN devices have also been shown to have an overload current capability of four times the rated capacity when cryogenically cooled [26]. Already at 213 K, a single-phase 1-kW GaN inverter at 60 Hz load frequency exhibited a 16 percent reduction in losses compared to room temperatures [27].…”

Section: Cold and Cryogenic Power Electronics (Cpe)mentioning

confidence: 99%

Next-Generation Cryo-Electric Hydrogen-Powered Aviation: A Disruptive Superconducting Propulsion System Cooled by Onboard Cryogenic Fuels

Nøland

Hartmann

Mellerud

2022

EEE Ind. Electron. Mag.

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The idea of hydrogen-powered airplanes has recently attracted a revitalized push in the aviation sector to combat CO2 emissions. However, to also reduce, or even eliminate, non-CO2 emissions and contrails, the combination of hydrogen with all-electric solutions is undoubtedly the best option. This article explores the next wave of disruptive technological developments needed to scale up zero-emission aviation beyond 2035. With respect to conventional electrical propulsion, major breakthroughs will be needed in terms of reducing the voltage level while increasing system-level power density and overall efficiency. We show how a next-generation hydrogen-powered aircraft could take advantage of its onboard cryogenic fuels to cool the electrical components, enabling a cryo-electric superconducting drivetrain that could lead to extraordinary performances.

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“…One of indisputable benefits of GaN-based technology is an ability to perform in harsh conditions such as high temperature. , In this context, the detailed investigation of the influence of such environment on surface-related phenomena is essential.…”

Section: Introductionmentioning

confidence: 99%

“…26,32 One of indisputable benefits of GaN-based technology is an ability to perform in harsh conditions such as high temperature. 33,34 In this context, the detailed investigation of the influence of such environment on surface-related phenomena is essential. In this work we report experimental investigation on the temperature dependence of surface density of states (SDOS) for Ga-polar GaN surface in the temperature range corresponding to the typical device's operation conditions.…”

Section: ■ Introductionmentioning

confidence: 99%

Origin of Surface Barrier Temperature Dependence for the Polar GaN Surface

Zdanowicz

Herman

Sobanska

et al. 2022

ACS Appl. Electron. Mater.

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Combining the mature technology of gallium nitride (GaN) with emerging materials such as van der Waals crystals is presently an important path in applied science research. Up to now, a broad spectrum of optoelectronic devices including light emitters, photodetectors, and solar cells based on mentioned materials has been presented. Understanding and controlling the surface-related phenomena is a crucial aspect for proper electrical device operation. In particular, an insight into the impact of external conditions such as elevated temperature on technologically important parameters such as surface barrier is of great importance. In this study we propose the first spectroscopic investigation of the vulnerability of the surface barrier on temperature for the Ga-polar GaN surface. Studies performed in the 300–440 K temperature range using contactless electroreflectance (CER) enabled nondestructive probing of GaN surface states. The range of investigated materials was extended to graphene/GaN and h-BN/GaN hybrids together with GaAs as a reference in order to provide a comprehensive case study. We show that GaN surface densities of states revealed robust temperature dependence compared to the energy gap. The mechanism of temperature-induced carrier redistribution at the surface is proposed as an explanation.

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SiC and GaN Devices With Cryogenic Cooling

Cited by 46 publications

References 47 publications

Cryogenic Performances Comparisons Among Si MOSFET, SiC MOSFET, Cascode GaN, and GaN Devices

Cryogenic Performances Comparisons Among Si MOSFET, SiC MOSFET, Cascode GaN, and GaN Devices

Next-Generation Cryo-Electric Hydrogen-Powered Aviation: A Disruptive Superconducting Propulsion System Cooled by Onboard Cryogenic Fuels

Origin of Surface Barrier Temperature Dependence for the Polar GaN Surface

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