SiC(0001)3 × 3-Si surface reconstruction — a new insight with a STM

Kulakov, M.A.; Henn, G.; Bullemer, B.

doi:10.1016/0039-6028(95)00919-1

Cited by 94 publications

(54 citation statements)

References 11 publications

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“…The letter E denotes total energies for a given atomic geometry throughout this work. The chemical potential limits of the C and Si reservoirs are fixed by the requirement that the underlying SiC bulk be stable against decomposition [16], leading to E [23], (d) [21], (e) and (h) [20], (f) [27], (g) [35]] and models adapted from the Si face [(a) [17] and (c) [36]]. …”

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confidence: 99%

“…We tested both configurations and included an additional Si tetrahedron (for details see the Supplemental Material [47]). Here, we include only the most stable cluster formed by 4 Si atoms, labeled d. Finally, we added a model originally proposed as a Si-rich structure for the 6H -SiC(0001)-(3 × 3) reconstruction by Kulakov, Henn, and Bullemer [36], labeled c. To summarize Fig. 1, all the alternative models we tested are too high in energy at the graphite line to coexist with the (2 × 2) C adatom model.…”

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confidence: 99%

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Why graphene growth is very different on the C face than on the Si face of SiC: Insights from surface equilibria and the(3×3)−3C−SiC(1¯1¯

et al. 2015

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We address the stability of the surface phases that occur on the C side of 3C-SiC(111) at the onset of graphene formation. In this growth range, experimental reports reveal a coexistence of several surface phases. This coexistence can be explained by a Si-rich model for the unknown (3 × 3) reconstruction, the known (2 × 2) C adatom phase, and the graphene-covered (2 × 2) C phase. By constructing an ab initio surface phase diagram using a van der Waals corrected density functional, we show that the formation of a well defined interface structure like the "buffer layer" on the Si side is blocked by Si-rich surface reconstructions.

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confidence: 99%

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confidence: 99%

Why graphene growth is very different on the C face than on the Si face of SiC: Insights from surface equilibria and the(3×3)−3C−SiC(1¯1¯

et al. 2015

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“…A majority of these studies dealt with the Si-rich [1][2][3][4][5][6][7][8][9][10] (3ϫ3) and (ͱ3ϫͱ3)R30°͑Refs. 6 -24͒ reconstructions on 4H-and 6H-SiC(0001), the (3ϫ3) reconstruction 5,25 on 6H-SiC(0001 ), and the oxygen induced silicate adlayer reconstructions on 4H-and 6H-SiC͕0001͖ surfaces.…”

Section: Introductionmentioning

confidence: 99%

Synchrotron x-ray photoelectron spectroscopy study of hydrogen-terminated6H−SiC{0001}surfaces

et al. 2003

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We report on highly resolved core-level and valence-band photoemission spectroscopies of hydrogenated, unreconstructed 6H-SiC(0001) and (0001 ) using synchrotron radiation. In the C 1s core level spectra of 6H-SiC(0001 ) a chemically shifted surface component due to C-H bonds is observed at a binding energy (0.47Ϯ0.02) eV higher than that of the bulk line. The Si 2p core-level spectra of SiC (0001) suggest the presence of a surface component as well but a clear identification is hindered by a large Gaussian width, which is present in all spectra and which is consistent with values found in the literature. The effect of thermal hydrogen desorption was studied. On 6H-SiC(0001) the desorption of hydrogen at 700-750°C is accompanied by a simultaneous transformation to the Si-rich (ͱ3ϫͱ3)R30°reconstruction. On 6H-SiC(0001 ) first signs of hydrogen desorption, i.e., the formation of a dangling bond state in the fundamental band gap of SiC, are seen at temperatures around 670°C while the (1ϫ1) periodicity is conserved. At 950°C a (3ϫ3) reconstruction is formed. The formation of these reconstructions on thermally hydrogenated 6H-SiC (0001) and (0001 ) is discussed in the light of earlier studies of 6H-SiC͕0001͖ surfaces. It will be shown that by using the hydrogenated surfaces as a starting point it is possible to gain insight into how the (ͱ3ϫͱ3)R30°and (3ϫ3) reconstructions are formed on 6H-SiC(0001) and 6H-SiC(0001 ), respectively. This is due to the fact that only hydrogen-terminated 6H-SiC͕0001͖ surfaces possess a surface carbon to silicon ratio of 1:1.

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“…A drastic example is given in Fig. 7(a), where additional to the adcluster on a SiC(111) surface, vacancies are introduced in the surface according to a former model discussed for (3 Â 3)SiC(111) [43]. Of course, scattering from the atoms surrounding the vacancies add to the fractional order beam intensities or, in another view, the vacancies may be regarded as additional beam splitters.…”

Section: Power and Prospects Of The Methodsmentioning

confidence: 99%