Si1−Ge  sputter epitaxy technique and its application to RTD

Kubota, Junichi; Hashimoto, Atsushi; Suda, Yoshiyuki

doi:10.1016/j.tsf.2005.08.402

Cited by 18 publications

(18 citation statements)

References 10 publications

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“…Recently, we have proposed a SiGe sputter epitaxy method for Si 1-x Ge x layer growth and we have obtained high crystalline layers [5]. Furthermore, we have reported on the method of formation of a flat Ge layer on a heavy boron-or phosphorous-doped Si(001) substrate with our proposed sputter epitaxy method [6,7].…”

Section: Introductionmentioning

confidence: 97%

Phosphorus Mediated Growth of Ge Layer on Si(001) Substrate

Hanafusa¹,

Hirose²,

Kasamatsu³

et al. 2011

Extended Abstracts of the 2011 International Conference on Solid State Devices and Materials

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Section: Introductionmentioning

confidence: 97%

Phosphorus Mediated Growth of Ge Layer on Si(001) Substrate

Hanafusa¹,

Hirose²,

Kasamatsu³

et al. 2011

Extended Abstracts of the 2011 International Conference on Solid State Devices and Materials

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“…Various SiGe thin film growth technologies have been developed, such as ultra-high vacuum chemical vapor deposition (UHVCVD), plasma-enhanced CVD (PECVD), magnetic RF sputtering system, and molecular beam epitaxy (MBE) [1][2][3][4][5][6][7][8], etc. Recently, high performance microcrystalline SiGe films were grown at low temperature by our designed LAPECVD system using SiH 4 and GeH 4 as the precursor gases [9][10].…”

Section: Introductionmentioning

confidence: 99%

Investigation of silicon—germanium metal-oxide-semiconductor field-effect transistors grown by laser-assisted plasma-enhanced chemical vapor deposition

Lee

Lin

Lee

2008

2008 5th IEEE International Conference on Group IV Photonics

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SiGe based metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated, in which the SiGe channel layer was deposited by using laser-assisted plasmaenhanced chemical vapor deposition (LAPECVD) system. The characteristics were compared with the device without laser assistance. Keywords-SiGe thin film, metal-oxide-semiconductor fieldeffect transistors, laser-assisted plasma-enhanced chemical vapor deposition

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“…We have recently developed a Si/Ge sputter epitaxy method for state-of-the-art Si/Si 1-x Ge x devices [1]. The Si/Si 1-x Ge x layers are currently fabricated by MBE (molecular beam epitaxy) and CVD (chemical vapor deposition).…”

Section: Introductionmentioning

confidence: 99%

“…To overcome this difficulty, we have recently developed a UHV-compatible magnetron sputter epitaxy method with a combination of Ar/H 2 mixture working gas [1]. With this method, we have obtained high quality Si 1-x Ge x epitaxial layers.…”

Section: Introductionmentioning

confidence: 99%