SI-thyristor as a high power switching device for fast high voltage pulse generators

Abstract

C -. 'on of SI-thyrisos as a f b t closing switch for puked power application was examined Since the SI-thyrkh~ employd in ths study are normally on+&&, a negative bias voltage, is necessary at the gate electrode to establish hold-offstate. As a mmquene, list aurentrise rate can be stmngly expected A low nmpedance gate driving Circuit built with MOSFETs improved turn-on characteristics remark&@. By adjusting anode voltage distriion and gate timing mefidly, sfxked SI-thymto~ were SllcceSSfully operated to make tum on. The highest Ndt obtained in this study is 55kA/ps. A M highvoltage pulse genemior with mqp%c pulse compression scheme was built by using stacked SI-thyristors. To obtain faster high voltage p u l s e , a x " t " s s . 'on line as an additional d t for pulse dmpemg was employed. in c;lructure of n-regm have a lower onvoltage and a shorter tum-on time.954 0-78034214-3/97/$10.00 0 1997 IEEE