Si-Substituted Ultrathin Ferroelectric Films

Ferroeléctricos sobre silicio preparados por métodos de depósito químico de disoluciones: de la lámina delgada a los sistemas auto-ensamblados

“…Different approaches to lower the crystallization temperature using CSD methods have been reported in the literature for ferroelectric films (16)(17)(18)(19)(20)(21)(22). Table I pyrolysis and oxidation of the organic components of the sol-gel film, which makes possible the formation of the M-O-M bonds of the ferroelectric perovskite at low temperatures.…”

Processing and properties of ferroelectric (Bi, La)4(Ti, Ge)3O12 thin films by chemical solution deposition

“…Recently, silicon (Si)-substituted BIT thin films with good surface morphologies were reported by Kijima and Ishiwara. 6 Since several properties of germanium (Ge) are quite similar to Si, Ge-doped BIT-based thin films are expected to exhibit excellent properties with a good surface morphology.…”

Growth and ferroelectric properties of Pb(Zr0.52Ti0.48)O3 thin films crystallized on MgO single-crystal substrates by hot isostatic pressing

“…Kakimi et al [1,2] previously revealed that the heat treatment of Bi 4 Ti 3 O 12 (BIT) films fabricated by spin-coating pyrolysis under an oxygen partial pressure (P O2 ) of 4.0 Â 10 5 Pa produced films with highly uniform c-axis orientation, as well as good surface morphology and ferroelectric properties. Kijima and Ishiwara [3][4][5] reported that the post-annealing of BIT films containing Bi 2 SiO 5 (BSO) under oxygen partial pressures of o1:0 MPa produces a stable perovskite structure with excellent leakage current characteristics, while the post-annealing of PZT films under P O2 ¼ 0:0120:03 MPa yields a material having a hysteresis curve with good squareness [6]. The present authors have also investigated the physical properties of films crystallized under high oxygen partial pressures of 41.0 MPa, and have reported that hot isostatic pressing (HIP) of amorphous 0.24Pb(Zn 1/3 Nb 2/3 )O 3 Á 0.384PbZrO 3 Á 0.376PbTiO 3 (PZNZT 24/38.4/37.6) films [7], (Pb 0.925 La 0.075 )(Zr 0.4 Ti 0.6 )O 3 (PLZT 7.5/40/60) films [8] and Pb(Zr 0.52 Ti 0.48 )O 3 films [9] on PbTiO 3 (PT)/ Pt(1 1 1)/SiO 2 /Si(1 0 0) substrates affords films with almost uniform c-axis orientation and particularly excellent electric insulation in high electric fields of 4400 kV/cm.…”