Growth and ferroelectric properties of Pb(Zr0.52Ti0.48)O3 thin films crystallized on MgO single-crystal substrates by hot isostatic pressing

Growth and Electrical Properties of PbMg_0.047Nb_0.095Zr_0.416Ti_0.442O₃ Films Fabricated by Metalorganic Decomposition

“…Pb(Zr,Ti)O 3 (PZT) [1,2] and Pb(Mg 1/3 Nb 2/3 )O 3 -PbZrO 3 -PbTiO 3 (PMNZT) [3,4] with compositions near the morphotropic phase boundary (MPB) show excellent piezoelectricity and ferroelectricity. Thus, these materials have been investigated extensively for potential piezo-and ferroelectric applications such as piezoelectric microactuators [5,6] and ferroelectric random access memory (FeRAM) devices [7,8]. We have examined the refined position of MPB for the ternary system PMNZT ceramics in our previous report [9] and found the existence of a pinpoint composition (PbMg 0.047 Nb 0.095 Zr 0.416 Ti 0.442 O 3 ; PMNZT 14.2/41.6/44.2) with excellent piezoelectric properties (k p = 70% and d 31 = -243 pC/N) and relatively high Curie temperature (T c = 328°C) near the MPB line.…”