Growth and Electrical Properties of PbMg_0.047Nb_0.095Zr_0.416Ti_0.442O₃ Films Fabricated by Metalorganic Decomposition

Abstract

On the basis of experimental data on the piezoelectric pinpoint composition of ceramics of the ternary system Pb(Mg1/3Nb2/3)O3-PbZrO3-PbTiO3 (PMNZT), which we investigated in our previous report, epitaxial PbMg0.047Nb0.095Zr0.416Ti0.442O3 thick films with thicknesses ranging from 0.4 to 1.9 m were fabricated on Pt(100)/MgO(100) substrates by metalorganic decomposition. The film- thickness dependence on the structural and electrical properties (dielectric, piezoelectric and ferroelectric properties) was investigated. All PMNZT films exhibited a highly uniform (001) orientation, regardless of the film thickness. The cross-sectional transmission electron microscope micrographs and all the physical data suggest that high-density PMNZT thick films with a thickness  1.0 m can be expected to function as highly electrically insulating capacitors with high potential for piezo- and ferroelectric applications.