Si_xGe_1−xGaAs Heterojunction IMPATT‐Diodes

Abstract

Experimental research IMPATT-diodes on heterostructures &Gel -zGaAs showed that the interphase boundary is noted with high thermal and radiation resistance. It is shown t h a t sucli diodes are an equivalent alternative IMPATT-diodes with type of Schottky barrier.

Effect of Mobile Space Charge in Si/Si0.9Ge0.1 Heterojunction Double Drift Impart Oscillator at W-Band Window Frequency

“…Heterostructure IMPATT and MITATT (Mixed Ionization Tunneling and Avalanche Transit Time) reported in recent times are capable of enhancing their efficiency by localizing the avalanche zone [1][2][3][4][5][6][7]. Moreover Si 1-x Ge x with Si has come up as a technologically important material combination for both electronic and opto-electronic devices [8][9][10][11][12].…”