Si/SiO2 etching in high density SF6/CHF3/O2 plasma

Hsiao, R.; Carr, Jeff

doi:10.1016/s0921-5107(97)00217-1

Cited by 17 publications

(8 citation statements)

References 15 publications

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“…This can be seen in the SEM profiles of samples which were etched with an excess of oxygen above the optimal condition, resulting in a poorly treated surface, due to the decreased etch rate as mentioned beforehand . This observation is also illustrated in Figure (d), which shows how the etch rate initially increases with increasing oxygen ratio up to an optimum value of 16% before a reverse trend is seen, with the etch rate decreasing with additional increase of oxygen by volume.…”

Section: Resultsmentioning

confidence: 56%

Scalable Production of Silicon Nanocone Solar Cells in Integrated Plasma Photovoltaic Nanofabrication Cluster

Huang

Lim

Chan

et al. 2015

Plasma Processes & Polymers

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An Integrated Plasma Photovoltaic Nanofabrication Cluster was used to produce nanocone silicon PV cells. Inductively coupled plasma discharges removed damage on Si wafers and textured arrays of nanocones, while simultaneously forming a p–n junction. A plasma enhanced chemical vapor deposition process passivated surfaces through growth of SiNx:H and a‐Si:H films. Microscopy of surfaces revealed uniform, well defined nanocones. Samples also show reductions in reflectance, while quantum efficiency measurements reveal improved spectral and PV response, with short circuit‐currents of 36 mA/cm2, open circuit voltages of 560 mV, fill factors reaching 80%, and conversion efficiencies of up to 14.8%.

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Section: Resultsmentioning

confidence: 56%

Scalable Production of Silicon Nanocone Solar Cells in Integrated Plasma Photovoltaic Nanofabrication Cluster

Huang

Lim

Chan

et al. 2015

Plasma Processes & Polymers

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“…The plasma etching relies either on CF 4 , [20][21][22][23] SF 6 , 1,[20][21][22][23][24] or CHF 3 [25][26][27][28] gases as the main etching precursors. The etched gases are frequently disassociated into radicals, which are used for the chemical etching possibly through a plasma etching mechanism.…”

Section: Resultsmentioning

confidence: 99%

Silicon etching of difluoromethane atmospheric pressure plasma jet combined with its spectroscopic analysis

Sung

Wei

Liu

et al. 2018

Jpn. J. Appl. Phys.

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A capacitivly coupled radio-frequency double-pipe atmospheric-pressure plasma jet is used for etching. An argon carrier gas is supplied to the plasma discharge jet; and CH 2 F 2 etch gas is inserted into the plasma discharge jet, near the silicon substrate. Silicon etchings rate can be efficiently-controlled by adjusting the feeding etching gas composition and plasma jet operating parameters. The features of silicon etched by the plasma discharge jet are discussed in order to spatially spreading plasma species. Electronic excitation temperature and electron density are detected by increasing plasma power. The etched silicon profile exhibited an anisotropic shape and the etching rate was maximum at the total gas flow rate of 4500 sccm and CH 2 F 2 concentration of 11.1%. An etching rate of 17 µm/min was obtained at a plasma power of 100 W.

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“…More etching occurred on the silicon at 302 mTorr (figure 2(d)) so that most of the needle-like structures are etched away and we get a smooth surface which results in high reflectance. The increased presence of oxygen at the higher chamber pressures result in better dissociation [15] of the fluoride and the larger number of fluorine ions leads to the enhanced etching.…”

Section: Discussion and Resultsmentioning

confidence: 99%

RIE texturing optimization for thin c-Si solar cells in SF₆/O₂plasma

Yoo¹,

Kim²,

Thamilselvan³

et al. 2008

J. Phys. D: Appl. Phys.

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Dry etching plasma parameters were optimized for texturing single crystalline thin silicon solar cells and hence for high efficiency. In reactive ion etching (RIE) texturing, a low etch depth (∼2 µm) was obtained compared with the etch depth that occurred in the wet chemical texturing process. For the flow ratios (SF6/O2) of 2 and 3, needle-like and cylindrical type structured surfaces were obtained. In the RIE process, the effects of working pressure, flow ratio, and etching time on reflectance and electrical properties of single crystalline silicon solar cells were investigated. The textured c-Si wafer with needle-like structure has good antireflectance behaviour. The interface defect density (Dit) in these textured silicon wafers increased with etching time. But an improvement in the reduction of interface trap density was observed through the annealing effect. Single crystalline solar cells with cylindrical type texture have higher values for open circuit voltage, short circuit current and efficiency in spite of a higher reflectance as compared with those needle-like structures. It is observed that the optimized SF6/O2 based chemistry in the RIE method is more suitable for thin crystalline silicon solar cells instead of the conventional wet texturization processes.

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Si/SiO2 etching in high density SF6/CHF3/O2 plasma

Cited by 17 publications

References 15 publications

Scalable Production of Silicon Nanocone Solar Cells in Integrated Plasma Photovoltaic Nanofabrication Cluster

Scalable Production of Silicon Nanocone Solar Cells in Integrated Plasma Photovoltaic Nanofabrication Cluster

Silicon etching of difluoromethane atmospheric pressure plasma jet combined with its spectroscopic analysis

RIE texturing optimization for thin c-Si solar cells in SF₆/O₂plasma

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Si/SiO2 etching in high density SF6/CHF3/O2 plasma

Cited by 17 publications

References 15 publications

Scalable Production of Silicon Nanocone Solar Cells in Integrated Plasma Photovoltaic Nanofabrication Cluster

Scalable Production of Silicon Nanocone Solar Cells in Integrated Plasma Photovoltaic Nanofabrication Cluster

Silicon etching of difluoromethane atmospheric pressure plasma jet combined with its spectroscopic analysis

RIE texturing optimization for thin c-Si solar cells in SF6/O2plasma

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Product

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RIE texturing optimization for thin c-Si solar cells in SF₆/O₂plasma