Si-Rich $\hbox{Si}_{\rm x}\hbox{C}_{1 - {\rm x}}$ Light-Emitting Diodes With Buried Si Quantum Dots

Cheng, Chih‐Hsien; Wu, Cheng‐Lung; Chen, Chun‐Chieh; Tsai, Ling-Hsuan; Lin, Yu‐Ju; Lin, Gong−Ru

doi:10.1109/jphot.2012.2215917

Cited by 47 publications

(8 citation statements)

References 43 publications

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“…Only the EL intensity of the band centered at 750 nm is integrated to estimate the output EL power. Theoretically, the dominant process of recombination in LED can be described by Z parameter according to the P-I curve [18]- [20]. In the steady state, the injected current balances the net recombination when stimulated emission is neglected.…”

Section: Resultsmentioning

confidence: 99%

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Direct-Current and Alternating-Current Driving Si Quantum Dots-Based Light Emitting Device

Zhang

et al. 2014

IEEE J. Select. Topics Quantum Electron.

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Light emitting devices based on Si quantum dots/SiO 2 multilayers with dot size of 2.5 nm have been prepared. Bright white light emission is achieved under the dc driving conditions and the turn-on voltage of the device is as low as 5 V. The frequencydependent electroluminescence intensity was observed under ac conditions of square and sinusoidal wave. It was found that the emission wavelength changes with frequency when sinusoidal ac is applied. The degradation of emission intensity is less than 12% after 3 h for ac driving condition, exhibiting the better device stability compared to the dc driving one.

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Section: Resultsmentioning

confidence: 99%

“…Then Z parameter can be obtained from the derivation of the ln(I) verse ln(P 1/2 ) plot [20]. It is interesting to study the device performance under ac driving conditions.…”

Section: Resultsmentioning

confidence: 99%

Direct-Current and Alternating-Current Driving Si Quantum Dots-Based Light Emitting Device

Zhang

et al. 2014

IEEE J. Select. Topics Quantum Electron.

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“…In 2012, Huang et al also fabricated the Si-QDs with an average size of 2.4 nm and an area density of 4.6 × 10 12 cm −2 in Si-rich SiN x film to demonstrate the 710-nm Si-QD LED [152]. Owing to the dielectric host matrix with the relatively large resistivity to decrease the current injection efficiency, the SiC semiconductor was selected as a candidate of host matrices [153][154][155][156][157]. In 2011, Rui et al detuned the Si-QD from 4.2 to 1.4 nm in SiC host matrix by detuning the C/Si composition ratio and annealing temperature to blue-shift the EL peak of the Si-QD LED from 775 to 539 nm.…”

Section: Pecvd Grown Si-qd Ledmentioning

confidence: 99%

“…Cheng et al changed the substrate temperature from 300 • C to 650 • C during the growth to detune the average Si-QD size from 2.5 to 2.7 nm. This method respectively decreased the turn-on voltage and current of yellow-light Si-QD LED to 4.2 V and 0.42 mA to enhance the maximal output power density to 8.52 µW/cm 2 with a corresponding P-I curve of 0.75 µW/A [156]. Tai and co-workers further suppressed the thickness of SiC with buried Si-QDs to 50 nm to enhance the EQE to 0.158% [157].…”

Section: Pecvd Grown Si-qd Ledmentioning

confidence: 99%

Si-QD Synthesis for Visible Light Emission, Color Conversion, and Optical Switching

Cheng

Lin

2020

Materials

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This paper reviews the developing progress on the synthesis of the silicon quantum dots (Si-QDs) via the different methods including electrochemical porous Si, Si ion implantation, and plasma enhanced chemical vapor deposition (PECVD), and exploring their featured applications for light emitting diode (LED), color-converted phosphors, and waveguide switching devices. The characteristic parameters of Si-QD LED via different syntheses are summarized for discussion. At first, the photoluminescence spectra of Si-QD and accompanied defects are analyzed to distinguish from each other. Next, the synthesis of porous Si and the performances of porous Si LED reported from different previous works are compared in detail. Later on, the Si-QD implantation in silicide (SiX) dielectric films developed to solve the instability of porous Si and their electroluminescent performances are also summarized for realizing the effect of host matrix to increase the emission quantum efficiency. As the Si-ion implantation still generates numerous defects in host matrix owing to physical bombardment, the PECVD method has emerged as the main-stream methodology for synthesizing Si-QD in SiX semiconductor or dielectric layer. This method effectively suppresses the structural matrix imperfection so as to enhance the external quantum efficiency of the Si-QD LED. With mature synthesis technology, Si-QD has been comprehensively utilized not only for visible light emission but also for color conversion and optical switching applications in future academia and industry.

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“…Nevertheless, the development of this kind of device requires the control of the Si-ncs’ size to improve the charge injection [ 5 , 6 ]. Si-ncs are mostly obtained in single layers of Si-rich dielectric materials [ 7 , 8 ]. However, a broad Si-nc size distribution was obtained in these single layers.…”

Section: Introductionmentioning

confidence: 99%

Effect of the Graded Silicon Content in SRN/SRO Multilayer Structures on the Si Nanocrystals and Si Nanopyramids Formation and Their Photoluminescence Response

et al. 2021

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Two multilayer (ML) structures, composed of five layers of silicon-rich oxide (SRO) with different Si contents and a sixth layer of silicon-rich nitride (SRN), were deposited by low pressure chemical vapor deposition. These SRN/SRO MLs were thermally annealed at 1100 °C for 180 min in ambient N2 to induce the formation of Si nanostructures. For the first ML structure (MLA), the excess Si in each SRO layer was about 10.7 ± 0.6, 9.1 ± 0.4, 8.0 ± 0.2, 9.1 ± 0.3 and 9.7 ± 0.4 at.%, respectively. For the second ML structure (MLB), the excess Si was about 8.3 ± 0.2, 10.8 ± 0.4, 13.6 ± 1.2, 9.8 ± 0.4 and 8.7 ± 0.1 at.%, respectively. Si nanopyramids (Si-NPs) were formed in the SRO/Si substrate interface when the SRO layer with the highest excess silicon (10.7 at.%) was deposited next to the MLA substrate. The height, base and density of the Si-NPs was about 2–8 nm, 8–26 nm and ~6 × 1011 cm−2, respectively. In addition, Si nanocrystals (Si-ncs) with a mean size of between 3.95 ± 0.20 nm and 2.86 ± 0.81 nm were observed for the subsequent SRO layers. Meanwhile, Si-NPs were not observed when the excess Si in the SRO film next to the Si-substrate decreased to 8.3 ± 0.2 at.% (MLB), indicating that there existed a specific amount of excess Si for their formation. Si-ncs with mean size of 2.87 ± 0.73 nm and 3.72 ± 1.03 nm were observed for MLB, depending on the amount of excess Si in the SRO film. An enhanced photoluminescence (PL) emission (eight-fold more) was observed in MLA as compared to MLB due to the presence of the Si-NPs. Therefore, the influence of graded silicon content in SRN/SRO multilayer structures on the formation of Si-NPs and Si-ncs, and their relation to the PL emission, was analyzed.

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Si-Rich $\hbox{Si}_{\rm x}\hbox{C}_{1 - {\rm x}}$ Light-Emitting Diodes With Buried Si Quantum Dots

Cited by 47 publications

References 43 publications

Direct-Current and Alternating-Current Driving Si Quantum Dots-Based Light Emitting Device

Direct-Current and Alternating-Current Driving Si Quantum Dots-Based Light Emitting Device

Si-QD Synthesis for Visible Light Emission, Color Conversion, and Optical Switching

Effect of the Graded Silicon Content in SRN/SRO Multilayer Structures on the Si Nanocrystals and Si Nanopyramids Formation and Their Photoluminescence Response

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