Direct-Current and Alternating-Current Driving Si Quantum Dots-Based Light Emitting Device

Mu, Weiwei; Zhang, Pei; Xu, Jun; Sun, Shantong; Xu, Jie; Chen, Kunji

doi:10.1109/jstqe.2013.2255587

Cited by 31 publications

(1 citation statement)

References 24 publications

(28 reference statements)

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“…A stable electroluminescence (EL) was observed at room temperature under the applied voltage higher than 17 V. The EL peak was shifted from 780 to 600 nm with decreasing the Si sublayer thickness from 4 to 1 nm [45] . Rui et al also studied the EL characteristics of Si NCs/SiC multilayers [46] . They prepared the multilayers with different dot sizes after high temperature annealing, and they found that the EL peak was blueshifted and the intensity was improved with decreasing the dot size, which proved that the EL was originated from the recombination of electron-hole pairs in Si NCs.…”

Section: Light Emitting Devicesmentioning

confidence: 99%

Si nanocrystals-based multilayers for luminescent and photovoltaic device applications

Lü

Cao

et al. 2018

J. Semicond.

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Low dimensional Si materials have attracted much attention because they can be developed in many kinds of new-generation nano-electronic and optoelectronic devices, among which Si nanocrystals-based multilayered material is one of the most promising candidates and has been extensively studied. By using multilayered structures, the size and distribution of nanocrystals as well as the barrier thickness between two adjacent Si nanocrystal layers can be well controlled, which is beneficial to the device applications. This paper presents an overview of the fabrication and device applications of Si nanocrystals, especially in luminescent and photovoltaic devices. We first introduce the fabrication methods of Si nanocrystals-based multilayers. Then, we systematically review the utilization of Si nanocrystals in luminescent and photovoltaic devices. Finally, some expectations for further development of the Si nanocrystals-based photonic and photovoltaic devices are proposed.

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Section: Light Emitting Devicesmentioning

confidence: 99%

Si nanocrystals-based multilayers for luminescent and photovoltaic device applications

Lü

Cao

et al. 2018

J. Semicond.

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High Brightness Electroluminescence of Non‐Carrier‐Injection QLEDs with Precise Layer Processing by Spontaneous Spreading Method

Zhao,

Liu,

Yao

et al. 2023

Adv Materials Inter

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The luminescent properties and mechanisms of non‐carrier injection (NCI) mode quantum dot light‐emitting diodes (QLEDs) are explored in this work. The intermediate insulator electric layer, Poly(vinylidene fluoride‐trifluoroethylene‐chlorofluoroethylene) (P(VDF‐TrFE‐CFE)), effectively blocks carrier injection from the electrodes. Carriers for radiative recombination in the quantum dot (QD) layer are generated by the corresponding carrier generation complex layer under an AC electric field. In this investigation, the emission layer (EML), comprising distinct layers of Cd‐based quantum dots, is precisely regulated using the spontaneous spreading (SS) method. The work reveals that the thickness of the QDs in NCI‐QLEDs significantly influences the device's luminescent performance. In NCI‐QLEDs with a double QD layer as the EML, the device exhibits a maximum brightness of 1003.6 cd m⁻2 and a start‐up voltage of 7 root mean square voltage (VRMS). This brightness level represents the highest reported for vertical emission NCI‐QLEDs. All devices exhibit a broad range of driven voltages. Interestingly, luminescence is detected only during a half‐cycle of the driven signal, as indicated by transient time‐resolved spectrum test results. A system is established to analyze the luminescence mechanism comprehensively. Finally, a proposed carrier compounding mechanism sheds light on the behavior of NCI‐QLED devices.

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Stability of electroluminescent perovskite quantum dots light‐emitting diode

2021

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Colloidal quantum dots (QDs) are considered to be a promising candidate for light‐emitting diodes (LEDs) applications considering their wide gamut range, simple color tuning, compatibility with large‐size and flexible substrates. Benefiting from the distinguished properties such as high photoluminescence quantum efficiency (PLQY), narrow emission linewidth, and low material cost, perovskite QDs have attracted wide attention from researchers. Despite tremendous progress has been made during the past several years, perovskite QDs‐based LEDs (QLEDs) are still plagued by the instability arising from the operation of the perovskite QLEDs, which have not been studied systematically. In this review, the origin of the instability of perovskite QLEDs is attributed to the vulnerability of emission materials and constituent layers. Simultaneously, the effective strategies to improve the durability of perovskite QDs and QLEDs are summarized, such as component engineering, ligand passivation, fabrication of robust and uniform constituent layers, as well as adopt appropriate device structures and driving modes. Ultimately, we put forward insights on the future research direction and prospects for perovskite QLEDs in practical applications.

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Direct-Current and Alternating-Current Driving Si Quantum Dots-Based Light Emitting Device

Cited by 31 publications

References 24 publications

Si nanocrystals-based multilayers for luminescent and photovoltaic device applications

Si nanocrystals-based multilayers for luminescent and photovoltaic device applications

High Brightness Electroluminescence of Non‐Carrier‐Injection QLEDs with Precise Layer Processing by Spontaneous Spreading Method

Stability of electroluminescent perovskite quantum dots light‐emitting diode

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