Si interstitial contribution of F+ implants in crystalline Si

Abstract

López, Pedro; Pelaz, L.; Duffy, R.; Meunier-Beillard, P.; Roozeboom, F.; Tak, van der, K.; Breimer, P.; Berkum, van, J.G.M.; Verheijen, M.A.; Kaiser, M. Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers)Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication Citation for published version (APA):López, P., Pelaz, L., Duffy, R., Meunier-Beillard, P., Roozeboom, F., Tak, van der, K., ... Kaiser, M. (2008). Si interstitial contribution of F+ implants in crystalline Si. Journal of Applied Physics, 103(9), 093538-1/4. [093538]. DOI: 10.1063/1.2917297 General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. The F effect in crystalline Si is quantified by monitoring defects and B diffusion in samples implanted with 25 keV F + and/or 40 keV Si + . We estimate that about +0.4 Si interstitials are generated per implanted F + ion, in agreement with the value resulting from the net separation of Frenkel pairs. For short annealings, B diffusion is lower when F + is coimplanted with Si + than when only Si + is implanted, while for longer annealings, B diffusion is higher. This is consistent with a lower but longer-lasting Si interstitial supersaturation set by the additional defects generated by the F + implant.

Fluorine effect on As diffusion in Ge

“…1(a)] are three physical phenomena yet showed in Si. [18][19][20][21][22][23][24][25][26]43 V. CONCLUSIONS…”