Si FinFET based 10nm technology with multi Vt gate stack for low power and high performance applications

Cho, H.-J.; Nam, K.J.; Yeo, Kyongmin; Kim, W.D.; Chung, Yeongu; Nam, You Sung; Kim, S.M.; Kwon, Woosung; Kang, Minseok; Kim, I.R.; Fukutome, H.; Jeong, Chanbae; Shin, Hojin; Kim, Y.S.; Kim, D.W.; Park, S.H.; Oh, Hwan Sool; Jeong, Jinho; Kim, S.B.; Ha, Daewon; Park, J.H.; Rhee, Heung Soo; Hyun, Seok-Hun; Shin, Donghwan; Kim, D.H.; Kim, H.Y.; Maeda, S.; Lee, K.H.; Kim, Y.H.; Kim, Minwoo; Koh, Yong-Nam; Yoon, Byounghee; Shin, Kyung-Ho; Lee, N.I.; Kangh, S.B.; Hwang, Kyung Ho; Lee, J.H.; Ku, J.; Nam, Sungho; Jung, Soon‐Moon; Kang, Hyung-Geun; Yoon, Jun-Sik; Jung, Eui S.

doi:10.1109/vlsit.2016.7573359

Cited by 46 publications

(14 citation statements)

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“…In conventional CMOS technology, substitutional doping using ion implantation is the method of choice for controllably doping selected areas of the semiconductor wafer (either Si, Ge or III-Vs) to fabricate complementary FETs and realize complex circuits with desired performances. The ion implantation technique is also used to selectively and degenerately dope the S/D regions of the FET to realize Ohmic n-and p-type contacts for NMOS (i.e., n + -p-n + ) and PMOS (i.e., p + -n-p + ) device configurations, respectively, as well as to realize various bipolar devices, such as LEDs and photodetectors, for optoelectronic applications [207,[363][364][365][366][367][368][369][370][371][372][373][374][375]. The ion implantation process is known to induce surface damage and amorphization in the as-implanted semiconductor crystals which requires further annealing to "activate" the implanted dopants and to minimize residual damage [170,[376][377][378][379][380][381].…”

Section: Substitutional Doping Of 2d Mosmentioning

confidence: 99%

Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor

et al. 2018

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Atomically thin molybdenum disulfide (MoS2), a member of the transition metal dichalcogenide (TMDC) family, has emerged as the prototypical two-dimensional (2D) semiconductor with a multitude of interesting properties and promising device applications spanning all realms of electronics and optoelectronics. While possessing inherent advantages over conventional bulk semiconducting materials (such as Si, Ge and III-Vs) in terms of enabling ultra-short channel and, thus, energy efficient field-effect transistors (FETs), the mechanically flexible and transparent nature of MoS2 makes it even more attractive for use in ubiquitous flexible and transparent electronic systems. However, before the fascinating properties of MoS2 can be effectively harnessed and put to good use in practical and commercial applications, several important technological roadblocks pertaining to its contact, doping and mobility (µ) engineering must be overcome. This paper reviews the important technologically relevant properties of semiconducting 2D TMDCs followed by a discussion of the performance projections of, and the major engineering challenges that confront, 2D MoS2-based devices. Finally, this review provides a comprehensive overview of the various engineering solutions employed, thus far, to address the all-important issues of contact resistance (RC), controllable and area-selective doping, and charge carrier mobility enhancement in these devices. Several key experimental and theoretical results are cited to supplement the discussions and provide further insight.

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Section: Substitutional Doping Of 2d Mosmentioning

confidence: 99%

Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor

et al. 2018

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“…The AC performance will be 20%-30% better in speed and 30%-50% better in power, as demonstrated with the various library sets shown in Fig. 13b [73,74] .…”

Section: Progress Of the Mainstream Industrymentioning

confidence: 83%

Advanced process and electron device technology

Zhang¹,

Su²,

Chang³

et al. 2022

Tsinghua Sci. Technol.

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This article reviews advanced process and electron device technology of integrated circuits, including recent featuring progress and potential solutions for future development. In 5 years, for pushing the performance of fin field-effect transistors (FinFET) to its limitations, several processes and device boosters are provided. Then, the three-dimensional (3D) integration schemes with alternative materials and device architectures will pave paths for future technology evolution. Finally, it could be concluded that Moore's law will undoubtedly continue in the next 15 years.

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“…Finally, NSFET can be resolved most problems and difficulties which are FinFET faced such as continuous scaling down (Fig. 2), short channel regression, manufacturing challenges and itself device performance was limited [14][15][16].…”

Section: ‫النانوية‬ ‫الصفائح‬ ‫ترانزستورات‬ ‫تقنية‬ ‫حول‬ ‫مقال‬mentioning

confidence: 99%

Review of Nanosheet Transistors Technology

Abdul-kadir¹,

Hashim²,

Shakib³

2021

Tikrit j. eng. sci.

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Nano-sheet transistor can be defined as a stacked horizontally gate surrounding the channel on all direction. This new structure is earning extremely attention from research to cope the restriction of current Fin Field Effect Transistor (FinFET) structure. To further understand the characteristics of nano-sheet transistors, this paper presents a review of this new nano-structure of Metal Oxide Semiconductor Field Effect Transistor (MOSFET), this new device that consists of a metal gate material. Lateral nano-sheet FET is now targeting for 3nm Complementary MOS (CMOS) technology node. In this review, the structure and characteristics of Nano-Sheet FET (NSFET), FinFET and NanoWire FET (NWFET) under 5nm technology node are presented and compared. According to the comparison, the NSFET shows to be more impregnable to mismatch in ON current than NWFET. Furthermore, as comparing with other nanodimensional transistors, the NSFET has the superior control of gate all-around structures, also the NWFET realize lower mismatch in sub threshold slope (SS) and drain induced barrier lowering (DIBL).

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Si FinFET based 10nm technology with multi Vt gate stack for low power and high performance applications

Cited by 46 publications

References 0 publications

Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor

Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor

Advanced process and electron device technology

Review of Nanosheet Transistors Technology

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