Si-doped nano- and microcrystalline diamond films with controlled bright photoluminescence of silicon-vacancy color centers

Седов, В. С.; Ralchenko, V.G.; Khomich, А.А.; Власов, И. И.; Vul, A. Ya.; Savin, Sergey; Goryachev, A. V.; Konov, V. I.

doi:10.1016/j.diamond.2015.04.003

Cited by 72 publications

(33 citation statements)

References 34 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…The diamond films deposited at T s ≥ 450 °C reveal comparable ZPL intensities as well as the FWHMs (6 nm) independently on T s . These observations are similar to previously published results . For the T s = 350 °C, the FWHM of the 738 nm Si‐V center peak is doubled while the intensity decreased to 70%.…”

Section: Resultssupporting

confidence: 92%

“…Si‐related centers are often and commonly incorporated in all chemically vapor deposited (CVD) diamonds by the etching of Si substrates, quartz windows, and bell jars or by addition of Si containing gasses to the gas mixture . To achieve PL enhancement and reproducible fabrication, studies related to the substrate material morphology and quality , gas composition or creating special structures were carried out. Due to carbon–carbon sp 3 hybridized bonds, diamond can be easily functionalized with various chemical groups which can also influence the optical activity of nearly localized color centers.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Influence of gas chemistry on Si-V color centers in diamond films

Potocký

Ižák

Varga

et al. 2015

Phys. Status Solidi B

View full text Add to dashboard Cite

In this paper, we studied the influence of process parameters on the incorporation and optical activity of the silicon vacancy (Si‐V) zero phonon line (ZPL) in diamond films. The ZPL intensity at 738 nm is studied in nano‐ and micro‐crystalline diamond films deposited by microwave plasma enhanced CVD as a function of a substrate temperature, gas composition, i.e. CO2 and N2 concentrations in the gas mixture. We found that the ZPL intensity of Si‐V center is independent in a broad deposition temperature range from 450 °C to 1100 °C with a full width of half maxima (FWHM) of 6 nm. For the lowest deposition temperature (350 °C), the ZPL intensity decreases and the FWHM doubles. The Si‐V center ZPL vanished for admixtures of 1% CO2 or 2.5% of N2 and higher in the gas mixture. For smaller concentrations, the ZPL intensity gradually decreased while keeping the ZPL peak position and FWHM constant. The influence of CO2 and N2 addition on the diamond morphology is also discussed with respect to the presence of Si‐V centers.

show abstract

Section: Resultssupporting

confidence: 92%

Section: Introductionmentioning

confidence: 99%

Influence of gas chemistry on Si-V color centers in diamond films

Potocký

Ižák

Varga

et al. 2015

Phys. Status Solidi B

View full text Add to dashboard Cite

show abstract

“…Recently, SiV centers were suggested as an alternative to NV centers [27][28][29][30] due to their strong ZPL containing about 70% of emission 31 and narrow width of around 5 nm at room temperature 14 .…”

Section: Introductionmentioning

confidence: 99%

Single Silicon Vacancy Centers in 10 nm Diamonds for Quantum Information Applications

Bolshedvorskii

Zeleneev

Vorobyov

et al. 2019

ACS Appl. Nano Mater.

View full text Add to dashboard Cite

Ultra-small (about 10 nm), low-strain, artificially produced diamonds with an internal, active color center have substantial potential for quantum information processing and biomedical applications.Thus, it is of great importance to be able to artificially produce such diamonds. Here, we report on the high-pressure, high-temperature synthesis of such nanodiamonds about 10 nm in size and containing an optically active, single silicon-vacancy color center. Using special sample preparation technique, we were able to prepare samples containing single nanodiamonds on the surface. By correlating atomic-force microscope images and confocal optical images we verified presents of optically active color centers in single nanocrystals, and using second-order correlation measurements proved single-photon emission statistics of this nanodiamonds. This color centers have non-blinking, spectrally narrow emission with narrow distribution of spectral width and positions of zero-phonon line thus proving high quality of the nanodiamonds produced.

show abstract

“…ii) in situ doping during the diamond growth by introducing precursor gas mixtures into the reaction chamber, e.g. Si containing gases like SiH 4 for the creation of SiV centers or nitrogen gas for the formation of NV centers: either in a controlled way for nanometer‐precision depth control of the generated NV centers (delta‐doping) or distributed within the diamond film by a background pressure of nitrogen in the chamber . In the case of SiV centers, also solid precursor sources are possible, e.g.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of Nanopillars on Nanocrystalline Diamond Membranes for the Incorporation of Color Centers

Schmidt

Bernardoff

Singer

et al. 2019

Physica Status Solidi (a)

View full text Add to dashboard Cite

A fabrication process of dense arrays of one-dimensional diamond nanostructures (diamond nanopillars) integrated on nanocrystalline diamond (NCD) membranes is implemented with an etched-through marker hole in the membrane in the center of the array. NCD films deposited on silicon substrates are used as starting material. The main fabrication steps consist of structuring the NCD film by electron beam lithography (EBL) applying aluminum as a hard mask and subsequent inductively coupled O 2 plasma reactive ion etching (ICP RIE), followed by structuring of the silicon substrate from the backside to open a NCD membrane. The developed fabrication procedure for nanostructured membranes can be transferred to monocrystalline diamond and implemented for deterministic single ion implantation into the nanopillars for generation of nitrogen-vacancy (NV) or silicon-vacancy (SiV) centers. For this purpose, the etched marker hole can be applied for alignment in the implantation process. Such diamond nanostructures with integrated color centers could play an important role in the development of novel quantum memory devices.

show abstract

Si-doped nano- and microcrystalline diamond films with controlled bright photoluminescence of silicon-vacancy color centers

Cited by 72 publications

References 34 publications

Influence of gas chemistry on Si-V color centers in diamond films

Influence of gas chemistry on Si-V color centers in diamond films

Single Silicon Vacancy Centers in 10 nm Diamonds for Quantum Information Applications

Fabrication of Nanopillars on Nanocrystalline Diamond Membranes for the Incorporation of Color Centers

Contact Info

Product

Resources

About