Si-doped diamond films prepared by chemical vapour deposition

Cui, Yu-xiao; Zhang, Jianguo; Sun, Fei; Zhang, Zhiming

doi:10.1016/s1003-6326(13)62821-6

Cited by 33 publications

(17 citation statements)

References 18 publications

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“…In both works the PL quenching at high enough silane concentrations has been ascribed, on the basis of Raman spectra analysis, to defects and amorphous carbon phase formation. A similar PL behavior has been reported by Cui et al , who deposited polycrystalline diamond films on silicon substrates in a HFCVD reactor with addition of tetraethoxysilane. However, no such degradation is found in the present work.…”

Section: Discussionsupporting

confidence: 84%

“…Cui et al deposited polycrystalline diamond films on silicon substrates in a HFCVD reactor with addition of tetraethoxysilane Si(OC 2 H 5 ) 4 in H 2 /acetone mixture. All these authors observed a strong photoluminescence of SiV centers, the PL intensity varied, however, nonmonotonically with the amount of Si feed in the reaction volume. Note that the diamond films produced in those works were not homoepitaxial ones.…”

Section: Introductionmentioning

confidence: 97%

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Photoluminescence of SiV centers in single crystal CVD diamond in situ doped with Si from silane

Bolshakov

Ralchenko

Седов

et al. 2015

Physica Status Solidi (a)

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Homoepitaxial single crystal diamond layers with bright photoluminescence (PL) of silicon-vacancy (SiV) color centers at 738 nm wavelength have been grown on (100) diamond substrates by a microwave plasma CVD using a controlled Si doping via adding silane to CH 4 -H 2 reaction gas mixture in the course of the deposition process. In the range of the silane concentrations SiH 4 /CH 4 explored, from 0 to 2.4%, the SiV PL intensity shows a nonmonotonic behavior with silane addition, with a maximum at 0.6%SiH 4 /CH 4 , and a rapid PL quenching at higher Si doping. The maximum SiV concentration of %450 ppb in the samples has been determined from optical absorption spectra. It is found that the SiV PL intensity can strongly, an order of magnitude, increase within non-epitaxial inclusions in single crystal diamond film.

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Section: Discussionsupporting

confidence: 84%

Section: Introductionmentioning

confidence: 97%

Photoluminescence of SiV centers in single crystal CVD diamond in situ doped with Si from silane

Bolshakov

Ralchenko

Седов

et al. 2015

Physica Status Solidi (a)

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“…These results are in agreement with the broadening observed for Raman spectra of Si doped diamonds. [95][96][97] FIG. 7.…”

Section: Vibrational Analysismentioning

confidence: 99%

Electronic structures and spectroscopic signatures of silicon-vacancy containing nanodiamonds

et al. 2018

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The presence of mid-gap states introduced by localized defects in wide-band-gap doped semiconductors can strongly affect the electronic structure and optical properties of materials, generating a wide range of applications. Silicon-divacancy defects in diamond have been recently proposed for probing high-resolution pressure changes and performing quantum cryptography, making them good candidates to substitute the more common nitrogen-vacancy centers. Using group theory and ab initio electronic structure methods, the molecular origin of mid-gap states, zero phonon line splitting and size dependence of the electronic transitions involving the SiV center is investigated in this work. The effects of localized defects on the Raman vibrational and carbon K-edge X-ray absorption spectra are also explored for nanodiamonds. This paper presents an important analysis of the electronic and vibrational structure of nanosized semiconductors in the presence of mid-gap states due to localized defects, providing new insights into possible mechanisms for modulating their optical properties.

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“…Thus, the doping of diamond coatings with Si looks promising both for photonic and mechanical applications. However, only limited number of works can be found in the literature on in situ CVD diamond doping with silicon from gaseous precursors in course of the films deposition [11][12][13], this being in contrast to the doping with other elements like N, P or B, for which the in situ doping is well established approach. Musale et al [11] used SiH4 to dope polycrystalline films grown by hot-filament CVD in CH4/H2 mixtures.…”

Section: Introduction *mentioning

confidence: 99%

Growth of Si-Doped Polycrystalline Diamond Films on AlN Substrates by Microwave Plasma Chemical Vapor Deposition

Седов

Хомич

Ralchenko

et al. 2021

J. Coat. Sci. Technol.

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Microcrystalline diamond films doped with silicon have been grown on aluminum nitride substrates by a microwave plasma CVD. The doping has been performed via adding silane in various concentrations to CH4-H2 reaction gas mixture in course of the deposition process. The films produced at the substrate temperatures of 750 to 950°C have been characterized by SEM, AFM, Raman and photoluminescence (PL) spectroscopy to assess the effect of Si doping on the diamond structure. The doped films showed bright photoluminescence of silicon-vacancy (SiV) color centers at 738 nm wavelength as well as noticeable side band at 723 nm. The optimum doping condition (SiH4/CH4 0.6%), that maximize the SiV PL emission, was determined for the range of silane concentrations SiH4/CH4 (0.0 -0.9%) explored. A further PL enhancement can be achieved by increase in the substrate temperature. The applied in situ doping from gas phase is shown to be an easy and effective method to incorporate Si in diamond in a controllable way.

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Si-doped diamond films prepared by chemical vapour deposition

Cited by 33 publications

References 18 publications

Photoluminescence of SiV centers in single crystal CVD diamond in situ doped with Si from silane

Photoluminescence of SiV centers in single crystal CVD diamond in situ doped with Si from silane

Electronic structures and spectroscopic signatures of silicon-vacancy containing nanodiamonds

Growth of Si-Doped Polycrystalline Diamond Films on AlN Substrates by Microwave Plasma Chemical Vapor Deposition

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