Photoluminescence of SiV centers in single crystal CVD diamond in situ doped with Si from silane

Abstract

Homoepitaxial single crystal diamond layers with bright photoluminescence (PL) of silicon-vacancy (SiV) color centers at 738 nm wavelength have been grown on (100) diamond substrates by a microwave plasma CVD using a controlled Si doping via adding silane to CH 4 -H 2 reaction gas mixture in the course of the deposition process. In the range of the silane concentrations SiH 4 /CH 4 explored, from 0 to 2.4%, the SiV PL intensity shows a nonmonotonic behavior with silane addition, with a maximum at 0.6%SiH 4 /CH 4 , and a rapid PL quenching at higher Si doping. The maximum SiV concentration of %450 ppb in the samples has been determined from optical absorption spectra. It is found that the SiV PL intensity can strongly, an order of magnitude, increase within non-epitaxial inclusions in single crystal diamond film.

SiV Color Centers in Si‐Doped Isotopically Enriched 12C and 13C CVD Diamonds

“…The doping with silicon was performed by adding silane SiH4 of natural silicon isotope composition into the plasma in concentration SiH 4 /CH 4 of 0.2–0.6%, as described in Ref. . The samples nat C with natural isotopic content and 13 C diamond films were deposited on the type Ib HPHT diamond substrates, while the 12 C films were produced on CVD diamond plates.…”

Color center fluorescence and spin manipulation in single crystal, pyramidal diamond tips

“…12,13 In this context, a high level of Si doping, here possibly induced by substrate etching, 10 introduces structural defects. 18 Thus, this shortening of s NV might be attributed to incorporated Si potentially lowering crystalline quality and inducing nondiamond phases. Moreover, [N] s can significantly quench NV PL via dipole-dipole interaction.…”

Morphology of Diamond Layers Grown on Different Facets of Single Crystal Diamond Substrates by a Microwave Plasma CVD in CH4-H2-N2 Gas Mixtures

“…A similar trend with PL ZPL shift and broadening was observed for NV -center at 637 nm, but not shown here. In this context, we mention the observations by Bolshakov et al [39] the stress and variations of PL intensity of SiV centers in {100} oriented Si-doped epitaxial CVD diamond film within hillocks with polycrystalline inclusions. Using the Raman and PL spectra mapping they found a strong compressive stress on the hillock tip and an order of magnitude enhancement in the PL intensity.…”