Si-based materials and devices for light emission in silicon

Castagna, Maria Eloisa; Coffa, S.; Monaco, Mariantonietta; Caristia, L.; Messina, Alberto; Mangano, Rosario; Bongiorno, Corrado

doi:10.1016/s1386-9477(02)00644-6

Cited by 103 publications

(65 citation statements)

References 5 publications

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“…1,2 Room temperature Si-NC:Er light emitting diodes (LEDs) with an external quantum efficiency (EQE) at 1.54 lm larger than 0.1% have been demonstrated. 1,[3][4][5] Er excitation in the Si-NC:Er system is either due to a direct impact of hot electrons or via an indirect energy transfer from nonradiative recombination of electron-hole pairs/excitons confined in silicon nanoclusters. The energy transfer is well documented and several mechanisms of the energy transfer under optical excitation have been suggested in recent publications.…”

Section: Introductionmentioning

confidence: 99%

Bipolar pulsed excitation of erbium-doped nanosilicon light emitting diodes

Anopchenko

Tengattini

Marconi

et al. 2012

Journal of Applied Physics

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High quantum efficiency erbium doped silicon nanocluster (Si-NC:Er) light emitting diodes (LEDs) were grown by low-pressure chemical vapor deposition (LPCVD) in a complementary metal-oxide-semiconductor (CMOS) line. Erbium (Er) excitation mechanisms under direct current (DC) and bipolar pulsed electrical injection were studied in a broad range of excitation voltages and frequencies. Under DC excitation, Fowler-Nordheim tunneling of electrons is mediated by Er-related trap states and electroluminescence originates from impact excitation of Er ions. When the bipolar pulsed electrical injection is used, the electron transport and Er excitation mechanism change. Sequential injection of electrons and holes into silicon nanoclusters takes place and nonradiative energy transfer to Er ions is observed. This mechanism occurs in a range of lower driving voltages than those observed in DC and injection frequencies higher than the Er emission rate. V C 2012 American Institute of Physics. [http://dx

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Section: Introductionmentioning

confidence: 99%

Bipolar pulsed excitation of erbium-doped nanosilicon light emitting diodes

Anopchenko

Tengattini

Marconi

et al. 2012

Journal of Applied Physics

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“…11 Si nanoparticles favor the injection of charge carriers, improve device lifetime, 14 reduce the population of hot electrons, 15 and consequently reduce impact excitation of Er. 10,16 It has also been argued that other mechanisms of EL can be introduced, including energy transfer from electrically excited Sincls to erbium ions. 13 In general, different processes can be dominant depending on material composition, film thickness, or voltage regimes.…”

Section: Introductionmentioning

confidence: 99%

Current transport and electroluminescence mechanisms in thin SiO2 films containing Si nanocluster-sensitized erbium ions

Jambois

Berencén

Hijazi

et al. 2009

Journal of Applied Physics

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We have studied the current transport and electroluminescence properties of metal oxide semiconductor ͑MOS͒ devices in which the oxide layer, which is codoped with silicon nanoclusters and erbium ions, is made by magnetron sputtering. Electrical measurements have allowed us to identify a Poole-Frenkel conduction mechanism. We observe an important contribution of the Si nanoclusters to the conduction in silicon oxide films, and no evidence of Fowler-Nordheim tunneling. The results suggest that the electroluminescence of the erbium ions in these layers is generated by energy transfer from the Si nanoparticles. Finally, we report an electroluminescence power efficiency above 10 −3 %.

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“…4,5 These promising characteristics raised considerable hopes on possible applications of the SiO 2 :͑Er, Si NCs͒ for Si photonics and specific devices have been proposed. [7][8][9] Particularly attractive is the prospect application of SiO 2 :͑Er, Si NCs͒ for development of a flash-lamp pumped optical amplifier-a much welcome replacement for the currently used fiber amplifier, which requires resonant and high power laser pumps for its operation. In order to achieve that, the Si-NC-induced sensitization process of Er emission in SiO 2 has to be thoroughly understood.…”

Section: Introductionmentioning

confidence: 99%

Energy transfer in Er-dopedSiO2sensitized with Si nanocrystals

et al. 2008

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We present a high-resolution photoluminescence study of Er-doped SiO 2 sensitized with Si nanocrystals ͑Si NCs͒. Emission bands originating from recombination of excitons confined in Si NCs, internal transitions within the 4f-electron core of Er 3+ ions, and a band centered at Ϸ 1200 nm have been identified. Their kinetics were investigated in detail. Based on these measurements, we present a comprehensive model for energy-transfer mechanisms responsible for light generation in this system. A unique picture of energy flow between the two subsystems was developed, yielding truly microscopic information on the sensitization effect and its limitations. In particular, we show that most of the Er 3+ ions available in the system are participating in the energy exchange. The long-standing problem of apparent loss of optical activity in the majority of Er dopants upon sensitization with Si NCs is clarified and assigned to the appearance of a very efficient energy exchange mechanism between Si NCs and Er 3+ ions. Application potential of SiO 2 : Er, sensitized by Si NCs, was discussed in view of the newly acquired microscopic insight.

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Si-based materials and devices for light emission in silicon

Cited by 103 publications

References 5 publications

Bipolar pulsed excitation of erbium-doped nanosilicon light emitting diodes

Bipolar pulsed excitation of erbium-doped nanosilicon light emitting diodes

Current transport and electroluminescence mechanisms in thin SiO2 films containing Si nanocluster-sensitized erbium ions

Energy transfer in Er-dopedSiO2sensitized with Si nanocrystals

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