Shunt Resistance Relation to Power Loss due to Potential Induced Degradation in Crystalline Photovoltaic Cells

Florides, Michalis; Livera, Andreas; Makrides, George; Georghiou, George E.

doi:10.1109/pvsc40753.2019.8980722

Cited by 4 publications

(2 citation statements)

References 10 publications

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“…Under the negative-bias application to the cells with respect to a grounded aluminum (Al) frame, Na + ions move to the cells and cause performance degradation of the PV modules, referred to as potential-induced degradation (PID). 5,6) In particular, in the case of p-type c-Si PV modules, Na-decorated stacking faults penetrating through the p-n junction of solar cells are formed by the negative-bias PID stress, and the fill factor of the current-voltage (I-V ) characteristics is degraded. 7) To solve these problems, we have been working on developing PV modules that do not contain encapsulants.…”

Section: Introductionmentioning

confidence: 99%

Potential-induced degradation of encapsulant-less p-type crystalline Si photovoltaic modules

SHIMPO

Ohdaira

2023

Jpn. J. Appl. Phys.

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We investigated the long-term durability of our newly developed encapsulant-less p-type crystalline silicon (c-Si) photovoltaic (PV) modules, with a base made of polycarbonate (PC), against potential-induced degradation (PID) in dry and damp heat (DH) environments. Encapsulant-less modules were found to have high PID resistance compared to conventional encapsulated c-Si PV modules in both PID conditions. We observed slight PID for the encapsulant-less modules in which the cover glass was in contact with the solar cell. The slight PID can be suppressed by using a base with a deeper groove so that a sufficient gap between the cover glass and the cell is prepared. Yellow precipitates were formed in the encapsulant-less modules in the DH environment. This is probably due to the hydrolysis of the PC, and proper measures to prevent the precipitate formation should be applied for the industrialization of the encapsulant-less modules.

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Section: Introductionmentioning

confidence: 99%

Potential-induced degradation of encapsulant-less p-type crystalline Si photovoltaic modules

SHIMPO

Ohdaira

2023

Jpn. J. Appl. Phys.

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“…However, for the diagnosis of large photovoltaic arrays, the only option is to use thermography in combination with a drone to at least briefly identify the defective modules. As follows from [10][11][12][13], in addition to the above methods, it is also possible to detect PID by changes in the dark I-V curves of the modulus, also called forward DC resistance (FDCR), or by impedance spectroscopy [14][15][16]. These methods require relatively less expensive equipment and can be used in situ.…”

Section: Introductionmentioning

confidence: 99%

Diagnostics of PID Early Stage in PV Systems

et al. 2021

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Potential induced degradation (PID) is a serious threat for the photovoltaic (PV) industry. The risk of PID may increase with increasing operating voltage of PV systems. Although PID tests are currently standard tests, the expansion of floating PV power plants and installation in humid climates show that PID-free modules are still sensitive to this type of degradation. Therefore, a method that can detect PID in the initial phase before standard tests reveal it, is necessary to increase the reliability of PV systems and maintain their lifetime. One possible tool for revealing early-stage PID manifestations is impedance spectroscopy and I-V dark curves measurements. Both IS and dark current measurement methods are sensitive to cell shunt resistance (RSH), which is strongly influenced by PID before significant power loss and can act as an early stage PID detection mechanism. The paper describes the differences of the common P-type PV module parameters both during the degradation process and also during the regeneration process when diagnosed by conventional and IS and dark current measurement methods.

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Early Detection of Potential Induced Degradation in the Field: Testing a New Method for Silicon PV Modules

Florides

Makrides

Georghiou

2021

2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)

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Shunt Resistance Relation to Power Loss due to Potential Induced Degradation in Crystalline Photovoltaic Cells

Cited by 4 publications

References 10 publications

Potential-induced degradation of encapsulant-less p-type crystalline Si photovoltaic modules

Potential-induced degradation of encapsulant-less p-type crystalline Si photovoltaic modules

Diagnostics of PID Early Stage in PV Systems

Early Detection of Potential Induced Degradation in the Field: Testing a New Method for Silicon PV Modules

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