Shuffle-glide dislocation transformation in Si

Abstract

The transformation of dislocation cores from the shuffle to the glide set of {111} glide planes in Si is examined in this work. The transformation is thermally activated and is favored by a resolved shear stress which applies no force on the original perfect shuffle dislocation. A resolved shear stress driving dislocation motion in the glide plane is not observed to promote the transition. The stress-dependent activation energy for the described shuffle-glide transformation mechanism is evaluated using a statistical analysis. It is observed that the transformation is not associated with an intermediate metastable state, as has been previously suggested in the literature.

Microscale Fracture Behavior of Single Crystal Silicon Beams at Elevated Temperatures

“…Earlier reports analytically estimate K C for nano and microlength scale samples within a limited temperature range of 60–80 °C. ,, Our results show that the crack tip shielding mechanism in the form of crack branching begins to operate in SC Si at intermediate temperatures between 300 and 400 °C (Figure f,h and c), which is considerably lower compared to the reported BDTT of macro-Si. This could be due to activation of partial dislocation slip at these temperatures . Silicon has a diamond cubic structure, which is equivalent to two interpenetrating FCC lattices shifted by a /4⟨111⟩.…”

“…Silicon has a diamond cubic structure, which is equivalent to two interpenetrating FCC lattices shifted by a /4⟨111⟩. This results in loss of symmetry along the {111} planes, the planes of easy slip in FCC materials, resulting in slip being accommodated by two asymmetric glide and shuffle planes . The glide plane can accommodate slip via disassociated partials in addition to activating full dislocations at high temperatures, while the shuffle plane can only accommodate full dislocations.…”

Uniaxial compression of silicon nanoparticles: An atomistic study on the shape and size effects

“…At last, the formation of the peculiar partial dislocations for <111> compression is probably correlated to large and inhomogeneous stresses, although the exact relationship is difficult to extract. It is interesting that recently, Li and Picu showed that a suitable stress state could promote the dissociation of perfect shuffle into glide partial dislocations [69].…”

Si/Ge (111) Semicoherent Interfaces: Responses to an In‐Plane Shear and Interactions with Lattice Dislocations

“…[ 24 ] The compact dislocation cores in Type I interface and the extended dislocation cores in the other two types of interface are consistent with the fact that, at low temperatures, dislocations in Si have compact and extended cores, respectively, when they are in the shuffle‐set and glide‐set slip planes. [ 48 ] Recent experiments and atomistic simulations found that within the Al/Si (111) interface that coincides with the glide‐set slip plane in Si, there are two domains with threefold and sixfold symmetries, respectively. [ 49 ] These two domains, respectively, similar to Type II and Type III interfaces identified in our work, allow for complete relaxation of the misfit strain.…”