Si/Ge (111) Semicoherent Interfaces: Responses to an In‐Plane Shear and Interactions with Lattice Dislocations

Abstract

Concurrent atomistic–continuum simulations are employed to study Si/Ge (111) semicoherent interfaces in terms of their responses to an in‐plane shear and interactions with lattice dislocations. Three types of Si/Ge interfaces, differing in interfacial structures and energy, are considered. Type I interface coincides with the shuffle‐set slip plane and contains a hexagonal network of edge dislocations. Type II and Type III interfaces both coincide with the glide‐set slip plane, yet they contain, respectively, a triangular and a hexagonal network of Shockley partial dislocations. The simulations show that among the three types of interfaces, 1) Type I interface is the least stable subject to an in‐plane shear and 2) Type III interface impedes the gliding of lattice dislocations the most significantly.

Peculiarities of the 7 × 7 to 5 × 5 Superstructure Transition during Epitaxial Growth of Germanium on Silicon (111) Surface

“…However, the surface of pure silicon with the (111) crystallographic orientation is traditionally used for germanium epitaxy [ 33 , 34 ] and is also very promising from the point of view of creating device structures [ 35 , 36 ], especially field-effect transistors [ 37 , 38 ] and photodiodes [ 39 ]. Some questions are devoted to Ge dewetting from Si(111) at high temperatures [ 40 ], strain relaxation [ 41 ], and formation of dislocations [ 42 , 43 ]. Moreover, Si(111) surface is used for epitaxy of GeSn [ 44 ] and SiGeSn [ 45 ] solid solution, as well as non-group-IV materials, for example, Au [ 46 , 47 ], Ga [ 48 ], GaN [ 49 , 50 ], GaSb [ 51 ] Bi 2 Te 3 [ 52 ], Se [ 53 ], etc.…”