Shrinking limits of silicon MOSFETs: numerical study of 10 nm scale devices

Abstract

We have performed numerical modeling of dual-gate ballistic n-MOSFET's with channel length of the order of 10 nm, including the effects of quantum tunneling along the channel and through the gate oxide. Our analysis includes a self-consistent solution of the full (two-dimensional) electrostatic problem, with account of electric field penetration into the heavily-doped electrodes. The results show that transistors with channel length as small as 8 nm can exhibit either a transconductance up to 4,000 mS/mm or gate modulation of current by more than 8 orders of magnitude, depending on the gate oxide thickness. These characteristics make the devices satisfactory for logic and memory applications, respectively, though their gate threshold voltage is rather sensitive to nanometer-scale variations in the channel length.

Two-dimensional quantum mechanical modeling of nanotransistors

“…We however expect that with decreasing channel length, the sub threshold I d will become larger than the Medici results due to quantum mechanical tunneling. 12…”

“…Device physics of these MOSFETs were analysed using simple quasi one dimensional models. [9][10][11][12][13] The best modeling approach for design and analysis of nanoscale MOSFETs is presently unclear, though a straightforward application of semiclassical methods that disregards quantum mechanical effects is generally accepted to be inadequate. Quantum mechanical modeling of MOSFETs with channel lengths in the tens of nanometers is important for many reasons:…”

2D Atomic Crystals: A Promising Solution for Next‐Generation Data Storage

“…It has been applied to many portable devices, such as cell phones, laptops, and USB flash disks. Regrettably, due to its physical limits, the MOSFET structural flash memory cell is difficult to shrink any further (unacceptable high power consumption and low stability), and is therefore unable to meet the demands of social development. To overcome this challenge, 2D materials have been widely studied in flash memories.…”

“…Regrettably, due to its physical limits, the MOSFET structural flash memory cell is difficult to shrink any further (unacceptable high power consumption and low stability), [29,30] and is therefore unable to meet the demands of social development. It has been applied to many portable devices, such as cell phones, laptops, and USB flash disks.…”

Analysis of integrated single-electron memory operation

“…Now let us discuss the readout of the stored charge. There is an experimental evidence 14 supported by the theoretical analysis 30 that FET can be used for sensing the charge at the size scale down to 10 nm. Another option (which seems to be preferable only at the size scale below 10 nm) is the use of SET.…”