Shot noise suppression and hopping conduction in graphene nanoribbons

Danneau, R.; Wu, Fan; Tomi, Matti; Oostinga, Jeroen B.; Morpurgo, Alberto F.; Hakonen, Pertti

doi:10.1103/physrevb.82.161405

Cited by 22 publications

(19 citation statements)

References 52 publications

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“…46,62,96,158,160,162,[164][165][166]174,176,186,195,196,[199][200][201][202][203][204][205][206]230,and 238) with exception of the previously highlighted experiments and Refs. 157,187, and 211 that did not provide sufficiently high resolution data to make a clear statement.…”

Section: B Observation Of Coulomb Blockadementioning

confidence: 90%

“…From all references presenting data at low temperature over a large range of charge carrier densities (see Refs. 46,56,61,62,96,[156][157][158][159][160]162,[164][165][166]168,173,174,176,180,[186][187][188][189]191,[194][195][196][197][198][199][200][201][202][203][204][205][206]210,211,213,[217][218][219]227,229,233,and 237), most agree that for sufficiently narrow ribbons at sufficiently low temperatures, transport is strongly suppressed. Typically, the conductance decreases with increasing gate voltage until at a certain point conductance is nearly completely suppressed.…”

Section: A Suppressed Conductancementioning

confidence: 99%

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Localized charge carriers in graphene nanodevices

Bischoff

Varlet

Simonet

et al. 2015

Applied Physics Reviews

100

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Graphene—two-dimensional carbon—is a material with unique mechanical, optical, chemical, and electronic properties. Its use in a wide range of applications was therefore suggested. From an electronic point of view, nanostructured graphene is of great interest due to the potential opening of a band gap, applications in quantum devices, and investigations of physical phenomena. Narrow graphene stripes called “nanoribbons” show clearly different electronical transport properties than micron-sized graphene devices. The conductivity is generally reduced and around the charge neutrality point, the conductance is nearly completely suppressed. While various mechanisms can lead to this observed suppression of conductance, disordered edges resulting in localized charge carriers are likely the main cause in a large number of experiments. Localized charge carriers manifest themselves in transport experiments by the appearance of Coulomb blockade diamonds. This review focuses on the mechanisms responsible for this charge localization, on interpreting the transport details, and on discussing the consequences for physics and applications. Effects such as multiple coupled sites of localized charge, cotunneling processes, and excited states are discussed. Also, different geometries of quantum devices are compared. Finally, an outlook is provided, where open questions are addressed.

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Section: B Observation Of Coulomb Blockadementioning

confidence: 90%

Section: A Suppressed Conductancementioning

confidence: 99%

Localized charge carriers in graphene nanodevices

Bischoff

Varlet

Simonet

et al. 2015

Applied Physics Reviews

100

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“…30 By reducing the width of MLG sheets down to nanoribbons, a strong suppression of shot noise has been observed consistent with inelastic hopping in these disordered systems. 50 If local temperature T (x) is well defined (quasiequilibrium) at every position x along the length of the graphene sheet, then it can be shown using theory for diffusive conductors that (for…”

Section: Introduction To Shot Noisementioning

confidence: 99%

Shot noise and conductivity at high bias in bilayer graphene: Signatures of electron-optical phonon coupling

et al. 2011

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We have studied electronic conductivity and shot noise of bilayer graphene (BLG) sheets at high bias voltages and low bath temperature T 0 = 4.2 K. As a function of bias, we find initially an increase of the differential conductivity, which we attribute to self-heating. At higher bias, the conductivity saturates and even decreases due to backscattering from optical phonons. The electron-phonon interactions are also responsible for the decay of the Fano factor at bias voltages V > 0.1 V. The high bias electronic temperature has been calculated from shot-noise measurements, and it goes up to ∼1200 K at V = 0.75 V. Using the theoretical temperature dependence of BLG conductivity, we extract an effective electron-optical phonon scattering time τ e-op . In a 230-nm-long BLG sample of mobility μ = 3600 cm 2 V −1 s −1 , we find that τ e-op decreases with increasing voltage and is close to the charged impurity scattering time τ imp = 60 fs at V = 0.6 V.

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“…[ [61][62][63][64][65]. An approach to re-cast McWhorter model of 1/f noise specifically for graphene was reported in Ref.…”

Section: Box I: Summary Of the Intrinsic Noise Types And 1/f Noise Fumentioning

confidence: 99%