Shot Noise in p-n Junction Frequency Converters*

Effects of Indium Depositions on Porous Silicon Nanostructure (PSN)

“…On the back side, an ohmic contact is simply obtained using evaporated aluminium. The samples were prepared following a standard method [5] of anodization under current density of 5 mAcm -2 in ethanoic hydroflouric acid at 1:1 ratio for 5 minutes etching time. The anodization process was illuminated using 100 W halogen lamp positioned at 20 cm from samples, resulting in PSN sample with a thickness of about 5µm determined from side view of Scanning Electron Microscope micrograph .…”

“…With increasing the percentage of Indium, the peak position change non-linearly to the shorter wavelength or higher energy. The strong PL may be attributed to absorption of the excitation and emission light in the accumulated Indium layers [5]. However, such a doping reaction during the plating may result in the blueshift due to the reaction-induced size reduction of the nm-size Si crystallites.…”

Gain and Noise Figure of a Variable-Capacitance Up-Converter*

“…However, the silicon and germanium retarding-field diffused diodes now under investigation are fairly accurately represented by the equivalent circuit shown in Fig. 2. (The design and properties of these devices are discussed in other papers), 6,6 In this diagram, COlin represents the smallest capacitance attainable, determined by the limitation on reverse bias voltage imposed by breakdown, and Cmox is the largest value, determined either by physical limitations or by choice. Upper sideband operation is assumed; that is, an input frequency /I is converted to an output frequency f2 using a beating oscillator at the frequency f2 -fl .…”