Noise in Submicron Devices

Ferry, D. K.; Grondin, R.

doi:10.1007/978-1-4615-3284-2_10

Cited by 2 publications

(2 citation statements)

References 48 publications

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“…Semiconductors are modeled by three nonparabolic spherical valleys for the conduction band, whose main parameters can be found in [20,21]. Apart from phonons, piezoelectric [22] and dislocations [23] scatterings are also included in the model as they have a significant influence over the GaN mobility.…”

Section: Electron Transport Methods and Device Structurementioning

confidence: 99%

Self-consistent electro-thermal simulations of AlGaN/GaN diodes by means of Monte Carlo method

Garcia

Íñiguez-de-la-Torre

Garcia-Perez

et al. 2015

Semicond. Sci. Technol.

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In this contribution we present the results from the simulation of an AlGaN/GaN heterostructure diode by means of a Monte Carlo tool where thermal effects have been included. Two techniques are investigated: (i) a thermal resistance method (TRM), and (ii) an advanced electro-thermal model (ETM) including the solution of the steady-state heat diffusion equation. Initially, a systematic study at constant temperature is performed in order to calibrate the electronic model. Once this task is performed, the electro-thermal methods are coupled with the Monte Carlo electronic simulations. For the TRM, several values of thermal resistances are employed, and for the ETM method, the dependence on the thermal-conductivity, thickness and die length is analyzed. It is found that the TRM with well-calibrated values of thermal resistances provides a similar behavior to ETM simulations under the hypothesis of constant thermal conductivity. Our results are validated with experimental measurements finding the best agreement when the ETM is used with a temperature-dependent thermal conductivity.

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Section: Electron Transport Methods and Device Structurementioning

confidence: 99%

Self-consistent electro-thermal simulations of AlGaN/GaN diodes by means of Monte Carlo method

Garcia

Íñiguez-de-la-Torre

Garcia-Perez

et al. 2015

Semicond. Sci. Technol.

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“…Rates calculated this way are only for collisions involving small momentum and energy transfers. More recent studies on photoexcited populations have shown that the assumption of static screening underestimates the energy-relaxation rate and that dynamic screening should be taken into account [8][9][10][11]. The effect on the dephasing time in photoexcited populations can be to reduce the time by a factor of 2 [10] and to explain the behaviour of the exciton energy at strong excitation [11].…”

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confidence: 99%

Energy exchange in 2D electron-electron collisions with dynamic screening

Ridley

2001

J. Phys.: Condens. Matter

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The rapidity of thermalization processes within an excited electron gas is determined by the rate at which substantial energy exchanges can occur. To calculate the rate of such processes, as distinct from calculating the rate of scattering (which is the rate usually calculated), it is necessary to take into account the dynamic nature of screening. It is shown that this can be carried out analytically for the case of a non-degenerate electron gas in a 2D quantum well within the random-phase approximation. The results indicate resonant screening and anti-screening effects associated with the response of the polar lattice in a semiconductor. These effects are illustrated in the case of GaN at 77 K.

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Noise in Submicron Devices

Cited by 2 publications

References 48 publications

Self-consistent electro-thermal simulations of AlGaN/GaN diodes by means of Monte Carlo method

Self-consistent electro-thermal simulations of AlGaN/GaN diodes by means of Monte Carlo method

Energy exchange in 2D electron-electron collisions with dynamic screening

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