Shot noise in magnetic double-barrier tunnel junctions

Szczepański, T.; Dugaev, V. K.; Barnaś, J.; Cascales, Juan Pedro; Aliev, F. G.

doi:10.1103/physrevb.87.155406

Cited by 12 publications

(10 citation statements)

References 22 publications

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“…The shot noise in such a system has been studied theoretically [54,55], indicating that the Fano factor depends on the magnetic configuration. In fact, experimental studies on layered double-barrier magnetic tunnel junctions report magnetic configuration dependent shot noise and discuss spin relaxation in the middle layer [56,57]. However, no significant difference of the Fano factor between P and AP configurations was detected in the present study.…”

Section: B Double Junction (Setup D)contrasting

confidence: 70%

Tunneling mechanism in a (Ga,Mn)As/GaAs-based spin Esaki diode investigated by bias-dependent shot noise measurements

et al. 2020

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Electron transport across a tunneling barrier is governed by intricate and diverse causes such as interface conditions, material properties, and device geometries. Here, by measuring the shot noise, we investigate electron transport in a (Ga,Mn)As/GaAs-based spin Esaki diode junction over a wide range of bias voltage. The asymmetric electronic band profile across the junction allows us to tune the types of tunneling process. By changing the bias voltage in a single device, we successively address the conventional direct tunneling, the excess current conduction through the mid-gap localized states, and the thermal excitation current conduction. These observations lead to a proper comparison of the bias dependent Fano factors. While the Fano factor is unity for the direct tunneling, it is pronouncedly reduced in the excess current region. Thus, we have succeeded in evaluating several types of conduction process with the Fano factor in a single junction.

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Section: B Double Junction (Setup D)contrasting

confidence: 70%

Tunneling mechanism in a (Ga,Mn)As/GaAs-based spin Esaki diode investigated by bias-dependent shot noise measurements

et al. 2020

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“…It is usually suppressed (F < 1) in DBMTJs due to two step tunneling 19 . Magnetic control of shot noise was reported recently in weakly asymmetric epitaxial Fe/MgO/Fe/MgO/Fe DBMTJs 20,26 . However, in previous reports shot noise in DBMTJs was measured below 10 K to avoid the influence of 1/f noise 20,22 .…”

Section: Introductionmentioning

confidence: 84%

“…In previous work, shot noise in epitaxial DBMTJs was shown to depend strongly on the magnetic configuration, and the symmetry of the two barriers, and a sequential tunneling model was used to explain the magnetic state dependence 19,20,26 . Following their work, we have:…”

Section: B Magnetic State Dependencementioning

confidence: 99%

Temperature dependence of shot noise in double barrier magnetic tunnel junctions

et al. 2018

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Shot noise reveals spin dependent transport properties in a magnetic tunnel junction(MTJ). We report measurement of shot noise in CoFeB/MgO/CoFeB/MgO/CoFeB double barrier magnetic tunnel junctions(DBMTJs), which shows a strong temperature dependence. The Fano factor used to characterise shot noise increases with decreasing temperature. A sequential tunneling model can be used to account for these results, in which a larger Fano factor results from larger spin relaxation length at lower temperatures.

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“…It should be also noted that the problem of spin shot noise has been already considered in many papers [22][23][24][25][26][27][28][29][30][31][32][33][34][35][36] and for various systems. The main interest of these works was focused on how the discreteness of spin affects the current fluctuations.…”

Section: Introductionmentioning

confidence: 99%

Shot noise in magnetic tunneling structures with two-level quantum dots

et al. 2016

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We analyze shot noise in a magnetic tunnel junction with a two-level quantum dot attached to the magnetic electrodes. The considerations are limited to the case when some transport channels are suppressed at low temperatures. Coupling of the two dot's levels to the electrodes are assumed to be generally different and also spin dependent. To calculate the shot noise we apply the approach based on the full counting statistics. The approach is used to account for experimental data obtained in magnetic tunnel junctions with organic barriers. The experimentally observed Fano factors correspond to the super-Poissonian statistics, and also depend on relative orientation of the electrodes' magnetic moments. We have also calculated the corresponding spin shot noise, which is associated with fluctuations of spin current.

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Shot noise in magnetic double-barrier tunnel junctions

Cited by 12 publications

References 22 publications

Tunneling mechanism in a (Ga,Mn)As/GaAs-based spin Esaki diode investigated by bias-dependent shot noise measurements

Tunneling mechanism in a (Ga,Mn)As/GaAs-based spin Esaki diode investigated by bias-dependent shot noise measurements

Temperature dependence of shot noise in double barrier magnetic tunnel junctions

Shot noise in magnetic tunneling structures with two-level quantum dots

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